Semiconductor device and method for manufacturing the same

ABSTRACT

An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiO x  is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiO x . The source and drain regions are formed using an oxide semiconductor layer which does not include SiO x  or an oxynitiride film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device including acircuit which includes a thin film transistor (hereinafter, referred toas TFT) and a manufacturing method thereof. For example, the presentinvention relates to an electronic appliance mounted with anelectro-optic device typified by a liquid crystal display panel or alight-emitting display device including an organic light-emittingelement as a component.

In this specification, a semiconductor device refers to all types ofdevices which can function by using semiconductor characteristics. Anelectro-optical device, a semiconductor circuit, and an electronicdevice are included in the category of all semiconductor devices.

2. Description of the Related Art

There are a variety of kinds of metal oxides intended for many uses.Indium oxide is a well-known material and is used for a transparentelectrode material necessary for a liquid crystal display or the like.

Further, some metal oxides have semiconductor characteristics. The metaloxides having semiconductor characteristics are one kind of a compoundsemiconductor. The compound semiconductor is a semiconductor formed bytwo or more kinds of atoms bonded together. In general, metal oxides areinsulators; however, it is known that metal oxides are semiconductorsdepending on the combination of elements included in the metal oxides.

For example, among metal oxides, tungsten oxide, tin oxide, indiumoxide, zinc oxide, and the like are known as the metal oxides havingsemiconductor characteristics. The metal oxide as above is used for atransparent semiconductor layer serving as a channel formation region ina thin film transistor (as disclosed in Patent Documents 1 to 4 andNon-patent Document 1).

Examples of metal oxides include not only an oxide of a single metalelement but also an oxide of a plurality of metal elements. For example,InGaO₃(ZnO)_(m) (m is a natural number) which is a homologous compoundis a known material (Non-patent Documents 2 to 4).

Then, it has been confirmed that such an In—Ga—Zn-based oxide as aboveis applicable to a channel layer of a thin film transistor (PatentDocument 5 and Non-patent Documents 5 and 6).

Further, attention has been drawn to a technique for manufacturing athin film transistor using an oxide semiconductor and applying the thinfilm transistor to an electronic device or an optical device. Forexample, Patent Document 6 and Patent Document 7 disclose a technique bywhich a thin film transistor is manufactured using zinc oxide or anIn—Ga—Zn—O-based oxide semiconductor as an oxide semiconductor film andsuch a transistor is used as a switching element or the like of an imagedisplay device.

REFERENCE Patent Documents

[Patent Document 1] Japanese Published Patent Application No. S60-198861

[Patent Document 2] Japanese Published Patent Application No. H8-264794

[Patent Document 3] Japanese Translation of PCT InternationalApplication No. H11-505377

[Patent Document 4] Japanese Published Patent Application No.2000-150900

[Patent Document 5] Japanese Published Patent Application No.2004-103957

[Patent Document 6] Japanese Published Patent Application No.2007-123861

[Patent Document 7] Japanese Published Patent Application No.2007-096055

Non-Patent Document

[Non-Patent Document 1] M. W. Prins, K. O. Grosse-Holz, G. Muller, J. F.M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M. Wolf, “Aferroelectric transparent thin-film transistor”, Appl. Phys. Lett., 17Jun. 1996, Vol. 68 p. 3650-3652

[Non-Patent Document 2] M. Nakamura, N. Kimizuka, and T. Mohri, “The

Phase Relations in the In₂O₃—Ga₂ZnO₄—ZnO System at 1350° C.”, J. SolidState Chem., 1991, Vol. 93, p. 298-315

[Non-Patent Document 3] N. Kimizuka, M. Isobe, and M. Nakamura,“Syntheses and Single-Crystal Data of Homologous Compounds,In₂O₃(ZnO)_(m) (m=3, 4, and 5), InGaO₃(ZnO)₃, and Ga₂O₃(ZnO)_(m) (m=7,8, 9, and 16) in the In₂O₃—ZnGa₂O₄—ZnO System”, J. Solid State Chem.,1995, Vol. 116, p. 170-178

[Non-Patent Document 4] M. Nakamura, N. Kimizuka, T. Mohri, and M.Isobe, “Syntheses and crystal structures of new homologous compounds,indium iron zinc oxides (InFeO₃(ZnO)_(m)) (m: natural number) andrelated compounds”, KOTAI BUTSURI (SOLID STATE PHYSICS), 1993, Vol. 28,No. 5, p. 317-327

[Non-Patent Document 5] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M.Hirano, and H. Hosono, “Thin-film transistor fabricated insingle-crystalline transparent oxide semiconductor”, SCIENCE, 2003, Vol.300, p. 1269-1272

[Non-Patent Document 6] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M.Hirano, and H. Hosono, “Room-temperature fabrication of transparentflexible thin-film transistors using amorphous oxide semiconductors”,NATURE, 2004, Vol. 432 p. 488-492

An object of an embodiment of the present invention is to provide asemiconductor device including a thin film transistor which includes anoxide semiconductor layer and has high electric characteristics.

SUMMARY OF THE INVENTION

In order to realize an amorphous oxide semiconductor layer, a thin filmtransistor which includes an oxide semiconductor layer including siliconoxide or silicon oxynitride is provided. Typically, an oxidesemiconductor layer is formed with use of an oxide semiconductor targetcontaining SiO₂ at from 0.1 wt % to 20 wt % inclusive, preferably, atfrom 1 wt % to 6 wt % inclusive, and SiO_(x) (x>0) which hinderscrystallization is added to the oxide semiconductor layer, whereby athin film transistor whose channel is formed at a gate threshold voltagewhich is a positive value and as close to 0 V as possible is realized.

The oxide semiconductor layer including SiO_(x) includes anIn—Ga—Zn—O-based oxide semiconductor, an In—Zn—O-based oxidesemiconductor, a Sn—Zn—O-based oxide semiconductor, an In—Sn—O-basedoxide semiconductor, a Ga—Zn—O-based oxide semiconductor, or aZn—O-based oxide semiconductor.

In order to reduce contact resistance with source and drain electrodelayers which are formed using a metal material with low electricresistance, source and drain regions are formed between the source anddrain electrode layers and the oxide semiconductor layer includingSiO_(x).

The source and drain regions include an oxide semiconductor layer whichdoes not include SiO_(x), e.g, an In—Ga—Zn—O-based oxide semiconductorwhich does not include SiO_(x), an In—Zn—O-based oxide semiconductorwhich does not include SiO_(x), a Sn—Zn—O-based oxide semiconductorwhich does not include SiO_(x), an In—Sn—O-based oxide semiconductorwhich does not include SiO_(x), a Ga—Zn—O-based oxide semiconductorwhich does not include SiO_(x), or a Zn—O-based oxide semiconductorwhich does not include SiO_(x). Alternatively, the source and drainregions may include an In—Ga—Zn—O-based non-single-crystal filmincluding nitrogen, that is, an In—Ga—Zn—O—N-based non-single-crystalfilm (also referred to as an IGZON film). This In—Ga—Zn—O—N-basednon-single-crystal film is formed as follows: an oxynitride filmcontaining indium, gallium, and zinc is formed in an atmospherecontaining a nitrogen gas with use of a target containing an oxide whichcontains indium, gallium, and zinc; and the oxynitride film is subjectedto heat treatment. Further alternatively, the source and drain regionsmay include a Ga—Zn—O-based non-single-crystal film including nitrogen,that is, a Ga—Zn—O—N-based non-single-crystal film (also referred to asa GZON film); a Zn—O-based non-single-crystal film including nitrogen,that is, a Zn—O—N-based non-single-crystal film; or a Sn—Zn—O-basednon-single-crystal film including nitrogen, that is, a Sn—Zn—O—N-basednon-single-crystal film.

As a material of the source and drain electrode layers, there are anelement selected from Al, Cr, Ta, Ti , Mo, and W, an alloy containingany of these elements, an alloy film containing a combination of any ofthese elements, and the like.

An embodiment of the present invention disclosed in this specificationis a semiconductor device including a gate electrode over an insulatingsurface, an oxide semiconductor layer including SiO_(x), an insulatinglayer between the gate electrode and the oxide semiconductor layer, andsource and drain regions between the oxide semiconductor layer includingSiO_(x) and source and drain electrode layers. The source and drainregions are formed using an oxide semiconductor material or anoxynitride material.

Note that the oxide semiconductor layer including SiO_(x) is formed by asputtering method with use of an oxide semiconductor target containingSiO₂ at from 0.1 wt % to 20 wt % inclusive.

Another embodiment of the present invention for the purpose of realizingthe above structure is a method for manufacturing a semiconductor deviceincluding the steps of forming a gate electrode over an insulatingsurface, forming an insulating layer over the gate electrode, forming anoxide semiconductor layer including SiO_(x) over the insulating layer bya sputtering method with use of a first oxide semiconductor targetcontaining SiO₂ at from 0.1 wt % to 20 wt % inclusive, and forming anoxynitirde layer over the oxide semiconductor layer including SiO_(x) bya sputtering method with use of a second oxide semiconductor target inan atmosphere containing nitrogen.

In the above manufacturing method, after the oxynitride layer is formed,a part of the oxynitride layer which overlaps with the gate electrode isremoved, whereby the oxide semiconductor layer including SiO_(x) ispartly exposed. Thus, a channel-etch type thin film transistor isformed.

The thin film transistor of the present invention is not limited to thechannel-etch type thin film transistor, but a bottom-gate type thin filmtransistor, a bottom-contact type thin film transistor, or a top-gatetype thin film transistor can be formed.

Another embodiment of the present invention is a method formanufacturing a semiconductor device including the steps of forming anoxide semiconductor layer including SiO_(x) over an insulating surfaceby a sputtering method with use of a first oxide semiconductor targetcontaining SiO₂ at from 0.1 wt % to 20 wt % inclusive, forming anoxynitride layer over the oxide semiconductor layer including SiO_(x) bya sputtering method with use of a second oxide semiconductor target inan atmosphere containing nitrogen, forming an insulating layer coveringthe oxynitride layer, and forming a gate electrode over the insulatinglayer.

In each of the above manufacturing methods, the oxynitride layer is usedas source and drain regions which are provided between source and drainelectrode layers and the oxide semiconductor layer including SiO_(x) inorder to reduce contact resistance with the source and drain electrodelayers formed using a metal material with low electric resistance value.

An object of the present invention is to realize a semiconductor deviceincluding a thin film transistor which includes an oxide semiconductorlayer including SiO_(x) and has high electric characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a cross-sectional view and a top view, respectively,illustrating an embodiment of the present invention.

FIGS. 2A and 2B are a cross-sectional view and a top view, respectively,illustrating an embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating an embodiment of thepresent invention.

FIG. 4 is a top view illustrating an embodiment of the presentinvention.

FIGS. 5A and 5B are a cross-sectional view and a top view, respectively,illustrating an embodiment of the present invention.

FIG. 6 is a top view illustrating an embodiment of the presentinvention.

FIG. 7 is a model diagram showing a single crystal structure ofInGaZnO₄.

FIG. 8 is a diagram showing a Si substitution model.

FIG. 9 is a diagram showing a final structure of the single crystalmodel.

FIG. 10 is a diagram showing a final structure of the Si substitutionmodel.

FIG. 11 is a graph showing a radical distribution function g (r) of eachmodel.

FIGS. 12A to 12E are cross-sectional views illustrating manufacturingsteps of an embodiment of the present invention.

FIGS. 13A and 13B are a cross-sectional view and a top view,respectively, illustrating an embodiment of the present invention.

FIGS. 14A and 14B are a cross-sectional view and a top view,respectively, illustrating an embodiment of the present invention.

FIGS. 15A and 15B are a cross-sectional view and a top view,respectively, illustrating an embodiment of the present invention.

FIGS. 16A and 16B are a cross-sectional view and a top view,respectively, illustrating an embodiment of the present invention.

FIGS. 17A and 17B are each a block diagram of a semiconductor deviceillustrating an embodiment of the present invention.

FIG. 18 is a configuration diagram of a signal line driver circuitillustrating an embodiment of the present invention.

FIG. 19 is a timing chart of an operation of a signal line drivercircuit illustrating an embodiment of the present invention.

FIG. 20 is a timing chart of an operation of a signal line drivercircuit illustrating an embodiment of the present invention.

FIG. 21 is a diagram showing one example of a structure of a shiftregister illustrating an embodiment of the present invention.

FIG. 22 is a diagram showing a connection structure of the flip-flopshown in FIG. 21.

FIG. 23 is a diagram of an equivalent circuit of a pixel of asemiconductor device illustrating an embodiment of the presentinvention.

FIGS. 24A to 24C are each a cross-sectional view of a semiconductordevice illustrating an embodiment of the present invention.

FIGS. 25A and 25B are a top view and a cross-sectional view,respectively, of a semiconductor device illustrating an embodiment ofthe present invention.

FIGS. 26A1 and A2 are top views and FIG. 26B is a cross-sectional view,of a semiconductor device illustrating an embodiment of the presentinvention.

FIG. 27 is a cross-sectional view of a semiconductor device illustratingan embodiment of the present invention.

FIGS. 28A and 28B are a cross-sectional view and an external view,respectively, of an electronic appliance illustrating a semiconductordevice of an embodiment of the present invention.

FIGS. 29A and 29B each illustrate an electronic appliance of anembodiment of the present invention.

FIGS. 30A and 30B each illustrate an electronic appliance of anembodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention are hereinafter described in detailwith reference to the accompanying drawings. However, the presentinvention is not limited to the description below, and it is easilyunderstood by those skilled in the art that modes and details disclosedherein can be modified in various ways without departing from the spiritand the scope of the present invention. Therefore, the present inventionis not construed as being limited to description of the embodiments.

(Embodiment 1)

In this embodiment, an example of a thin film transistor including anoxide semiconductor layer including SiO_(x) is described with referenceto FIGS. 1A and 1B.

FIG. 1A illustrates a thin film transistor 160 which is one type ofbottom-gate structure, and is a cross-sectional view of a structurecalled a channel-etch type. FIG. 1B illustrates an example of a top viewof the thin film transistor whose cross section taken along line B1-B2corresponds to FIG. 1A.

The thin film transistor 160 illustrated in FIG. 1A includes a gateelectrode layer 101 over a substrate 100, a gate insulating layer 102over the gate electrode layer 101, an oxide semiconductor layer 103including SiO_(x) which is over the gate insulating layer 102 andoverlaps with the gate electrode layer 101, and source and drainelectrode layers 105 a and 105 b which partly overlap with the oxidesemiconductor layer 103 including SiO_(x). In addition, source and drainregions 104 a and 104 b are provided between parts of the oxidesemiconductor layer 103 including SiO_(x) and the source and drainelectrode layers 105 a and 105 b. Moreover, a protective insulatinglayer 106 is provided, which is in contact with and covers the oxidesemiconductor layer 103 including SiO_(x) and the source and drainelectrode layers 105 a and 105 b.

The gate electrode layer 101 can be formed with a single layer or astacked layer using a metal material such as aluminum, copper,molybdenum, titanium, chromium, tantalum, tungsten, neodymium, orscandium; an alloy material which contains any of these materials as amain component; or a nitride containing any of these materials. It ispreferable to use a low-resistance conductive material such as aluminumor copper. However, such a low-resistance conductive material has thedisadvantages of low heat resistance, being easily corroded, and thelike; thus, it is used in combination with a conductive material havingheat resistance. As the conductive material having heat resistance,molybdenum, titanium, chromium, tantalum, tungsten, neodymium, scandium,or the like is used.

For example, a stacked structure of the gate electrode layer 101 ispreferably a two-layer structure where a molybdenum layer is stackedover an aluminum layer, a two-layer structure where a molybdenum layeris stacked over a copper layer, a two-layer structure where a titaniumnitride layer or a tantalum nitride layer is stacked over a copperlayer, or a two-layer structure where a titanium nitride layer and amolybdenum layer are stacked. Alternatively, a three-layer structurewhere a tungsten layer or a tungsten nitride layer, an aluminum-siliconalloy layer or an aluminum-titanium alloy layer, and a titanium nitridelayer or a titanium layer are stacked is preferable.

The gate insulating layer 102 is formed by a plasma CVD method or asputtering method. The gate insulating layer 102 can be formed with asingle layer or a stacked layer using any of a silicon oxide layer, asilicon nitride layer, a silicon oxynitride layer, and a silicon nitrideoxide layer by a CVD method, a sputtering method, or the like.Alternatively, the gate insulating layer 102 can be formed of a siliconoxide layer by a CVD method using an organosilane gas.

The oxide semiconductor layer 103 including SiO_(x) is formed from anIn—Ga—Zn—O-based non-single-crystal film, or includes anIn—Sn—Zn—O-based oxide semiconductor, a Ga—Sn—Zn—O-based oxidesemiconductor, an In—Zn—O-based oxide semiconductor, a Sn—Zn—O-basedoxide semiconductor, an In—Sn—O-based oxide semiconductor, aGa—Zn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductor.

In this embodiment, the oxide semiconductor layer 103 including SiO_(x)is formed by a sputtering method with use of an oxide semiconductortarget containing SiO₂ at 5 wt % (SnO₂:ZnO=1:1). In this case, the oxidesemiconductor layer 103 including SiO_(x) is formed to be a filmincluding Sn at from 0.01 wt % to 60 wt % inclusive, preferably at from3 wt % to 50 wt % inclusive.

The source and drain regions 104 a and 104 b include an oxidesemiconductor layer which does not include SiO_(x), e.g., anIn—Ga—Zn—O-based oxide semiconductor which does not include SiO_(x), anIn—Zn—O-based oxide semiconductor which does not include SiO_(x), aSn—Zn—O-based oxide semiconductor which does not include SiO_(x), anIn—Sn—O-based oxide semiconductor which does not include SiO_(x), aGa—Zn—O-based oxide semiconductor which does not include SiO_(x), or aZn—O-based oxide semiconductor which does not include SiO_(x).Alternatively, the source and drain regions 104 a and 104 b may beformed from an In—Ga—Zn—O-based non-single-crystal film includingnitrogen, that is, an In—Ga—Zn—O—N-based non-single-crystal film (alsoreferred to as an IGZON film). Further alternatively, the source anddrain regions 104 a and 104 b may be formed from a Ga—Zn—O-basednon-single-crystal film including nitrogen, that is, a Ga—Zn—O—N-basednon-single-crystal film (also referred to as a GZON film), aZn—O—N-based non-single-crystal film including nitrogen, or aSn—Zn—O—N-based non-single-crystal film including nitrogen may be used.

In this embodiment, the source and drain regions 104 a and 104 b areformed using an oxynitride material. The oxynitride material is obtainedas follows: sputtering is performed in an atmosphere containing anitrogen gas, with use of an oxide semiconductor target containing In(indium), Ga (gallium), and Zn (zinc) (In₂O₃:Ga₂O₃:ZnO=1:1:1), so thatan oxynitiride film containing indium, gallium, and zinc is formed; andthe oxynitride film is subjected to heat treatment.

The source and drain regions 104 a and 104 b do not include Si, which isa major different point from the oxide semiconductor layer 103 includingSiO_(x). In the source and drain regions 104 a and 104 b, in some cases,crystal grains are generated immediately after the film formation orcrystal grains are generated in the case where heat treatment isperformed after film formation. On the other hand, in the oxidesemiconductor layer 103 including SiO_(x), the crystallizationtemperature of the film is high, which is caused by inclusion ofSiO_(x). Thus, for example, even if heat treatment is performed at atemperature at which the source and drain regions 104 a and 104 b arepartly crystallized, the oxide semiconductor layer 103 including SiO_(x)can keep an amorphous state.

The source and drain electrode layers 105 a and 105 b are formed usingan element selected from Al, Cr, Ta, Ti, Mo, and W, an alloy containingany of these elements, an alloy film containing a combination of any ofthese elements, or the like.

The source and drain regions 104 a and 104 b enable contact resistancewith the source and drain electrode layers 105 a and 105 b formed usinga metal material with low electric resistance to be reduced.Accordingly, by providing the source and drain regions 104 a and 104 b,the thin film transistor 160 with higher electric characteristics isrealized.

Further, the protective insulating layer 106 can have a single layerstructure or a stacked-layer structure using any of a silicon nitridefilm, a silicon oxide film, a silicon oxynitride film, and the like,which is formed by a sputtering method or the like.

(Embodiment 2)

In this embodiment, an example of a thin film transistor which isdifferent in the width of a gate electrode from that of Embodiment 1 isdescribed with reference to FIGS. 2A and 2B.

FIG. 2A illustrates a thin film transistor 170 which is one type ofbottom-gate structure, and is an example of a cross-sectional view of astructure called a channel-etch type. FIG. 2B is an example of a topview of the thin film transistor whose cross section taken along dottedline C1-C2 corresponds to FIG. 2A

The thin film transistor 170 illustrated in FIG. 2A includes a gateelectrode layer 101 over a substrate 100, a gate insulating layer 102over the gate electrode layer 101, oxide semiconductor layers over thegate insulating layer 102, a source and drain electrode layers 105 a and105 b over the oxide semiconductor layers, and a protective insulatinglayer 106 covering the stacked oxide semiconductor layers and the sourceand drain electrode layers 105 a and 105 b.

In this embodiment, over the gate insulating layer 102, an oxidesemiconductor layer 103 including SiO_(x) (also referred to as a firstoxide semiconductor layer) and a second oxide semiconductor layer (or anoxynitride layer) are stacked. However, the second oxide semiconductorlayer is not formed over a region which functions as a channel in theoxide semiconductor layer 103 including SiO_(x) because the second oxidesemiconductor layer over the region is removed by etching. Note that thesecond oxide semiconductor layer (or the oxynitride layer) serves as abuffer layer, an n⁺ layer, and source and drain regions. In FIG. 2A, thesecond oxide semiconductor layer is illustrated as the source and drainregions 104 a and 104 b.

In this embodiment, the oxide semiconductor layer 103 including SiO_(x)is formed with use of an oxide semiconductor target containing In(indium), Ga (gallium), and Zn (zinc), in which SiO₂ is included at from0.1 wt % to 20 wt % inclusive, preferably, at from 1 wt % to 6 wt %inclusive. Inclusion of SiO_(x) in an oxide semiconductor makes an oxidesemiconductor film to be formed easy to be amorphous. In addition, inthe case where the oxide semiconductor film is subjected to heattreatment, crystallization of the oxide semiconductor film can besuppressed.

Change in a structure of an oxide semiconductor containing In (indium),Ga (gallium), and Zn (zinc) which is so-called IGZO, by including SiO₂therein, was calculated by the classical molecular dynamics simulation.In the classical molecular dynamics simulation, empirical potentialcharacterizing interaction between atoms is defined, whereby forceacting on each atom is evaluated, and Newton's equation of motion isnumerically solved, whereby motion (time-dependent change) of each atomcan be deterministically tracked.

Hereinafter, calculation models and calculation conditions aredescribed. Note that in this calculation, the Born-Mayer-Hugginspotential was used.

A single crystal structure of InGaZnO₄ including 1680 atoms (see FIG. 7)and a structure of InGaZnO₄ including 1680 atoms in which 20 atoms ofeach of In, Ga, and Zn were substituted by Si atoms (see FIG. 8) wereformed. In the model of Si substitution, Si atoms were included at 3.57atoms % (2.34 wt %). The density of the model of the single crystal was6.36 g/cm³, and the density of the model of Si substitution was 6.08g/cm³.

At 1727° C. which is equal to or lower than the melting point of theInGaZnO₄ single crystal (about 2000° C. according to estimation by theclassical molecular dynamics simulation), structure relaxation wasperformed by the classical molecular dynamics simulation at a fixedpressure (1 atm) for 150 psec (time step width 0.2 fsec×750000 steps).The radial distribution functions g (r) of the two structures werecalculated. Note that the radial distribution function g (r) is afunction representing the probability density of atoms existing at adistance of r from one atom. As the correlation between atomsdisappears, g (r) is close to 1.

FIG. 9 and FIG. 10 show final structures obtained by performing theclassical molecular dynamics simulation for 150 psec on the above twocalculation models of FIG. 7 and FIG. 8. In addition, FIG. 11 shows theradial distribution function g (r) in each structure.

The model of single crystal shown in FIG. 9 is stable and keeps thecrystal structure even in the final structure, whereas the model of Sisubstitution shown in FIG. 10 is unstable, and it can be observed thatthe crystal structure is distorted with time and changes into anamorphous structure. As seen in FIG. 11, by comparing the radialdistribution functions g (r) of the structural models with each other,it is found that the model of single crystal has peaks even at a longdistance and the long-range order. On the other hand, it is found thatin the model of Si substitution, the peak disappears at a distance about0.6 nm, and the model of Si substitution does not have the long-rangeorder.

These calculation results indicate that in the case of including SiO₂,the IGZO thin film with the amorphous structure is more stable than thatwith a crystalline structure, and IGZO is easily to be amorphous byincluding SiO₂ in the IGZO thin film. The IGZO thin film including SiO₂immediately after deposition, which is practically obtained by asputtering method, is an amorphous semiconductor film. Thus, accordingto these calculation results, the IGZO thin film including SiO₂ canhinder crystallization even if heat treatment is performed at hightemperature, and can keep the amorphous structure.

Instead of an In—Ga—Zn—O-based non-single-crystal film, the oxidesemiconductor layer 103 including SiO_(x) can be formed using anIn—Sn—Zn—O-based, Ga—Sn—Zn—O-based, In—Zn—O-based, Sn—Zn—O-based,In—Sn—O-based, Ga—Zn—O-based, or Zn—O-based oxide semiconductor.

The source and drain regions 104 a and 104 b include an oxidesemiconductor layer which does not include SiO_(x), e.g., anIn—Ga—Zn—O-based oxide semiconductor which does not include SiO_(x), anIn—Zn—O-based oxide semiconductor which does not include SiO_(x), aSn—Zn—O-based oxide semiconductor which does not include SiO_(x), anIn—Sn—O-based oxide semiconductor which does not include SiO_(x), aGa—Zn—O-based oxide semiconductor which does not include SiO_(x), or aZn—O-based oxide semiconductor which does not include SiO_(x).Alternatively, the source and drain regions 104 a and 104 b may beformed from an In—Ga—Zn—O—N-based non-single-crystal film, aGa—Zn—O—N-based non-single-crystal film, a Zn—O—N-basednon-single-crystal film, or a Sn—Zn—O—N-based non-single-crystal film.

In this embodiment, the source and drain regions 104 a and 104 b areformed using an oxynitride material. The oxynitride material is obtainedas follows: sputtering is performed in an atmosphere containing anitrogen gas, with use of an oxide semiconductor target containing Sn(tin) and Zn (zinc) (SnO₂:ZnO=1:1), so that a Sn—Zn—O—N-basednon-single-crystal film is formed; and the Sn—Zn—O—N-basednon-single-crystal film is subjected to heat treatment.

Hereinafter, an example of manufacturing a display device using theabove thin film transistor 170 as a switching element of a pixel portionis described.

First, the gate electrode layer 101 is provided over the substrate 100having an insulating surface. A glass substrate is used as the substrate100 having an insulating surface. The gate electrode layer 101 can beformed with a single layer or a stacked layer using a metal materialsuch as molybdenum, titanium, chromium, tantalum, tungsten, aluminum,copper, neodymium, or scandium, or an alloy material which contains anyof these materials as a main component. Note that when the gateelectrode layer 101 is formed, a capacitor wiring 108 of the pixelportion and a first terminal 121 of a terminal portion are togetherformed.

For example, a stacked structure of the gate electrode layer 101 ispreferably a two-layer structure where a molybdenum layer is stackedover an aluminum layer, a two-layer structure where a molybdenum layeris stacked over a copper layer, a two-layer structure where a titaniumnitride layer or a tantalum nitride layer is stacked over a copperlayer, or a two-layer structure where a titanium nitride layer and amolybdenum layer are stacked. Alternatively, a stacked structure where acopper oxide layer including Ca which is to be a barrier layer isstacked over a copper layer including Ca, or a stacked structure where acopper oxide layer including Mg which is to be a barrier layer isstacked over a copper layer including Mg can be given. As a three-layerstructure, a stacked structure where a tungsten layer or a tungstennitride layer, an alloy of aluminum and silicon or an alloy of aluminumand titanium, and a titanium nitride layer or a titanium layer arestacked is preferable.

Next, the gate insulating layer 102 covering the gate electrode layer101 is formed. The gate insulating layer 102 is formed to have athickness of 50 nm to 400 nm by a sputtering method, a PCVD method, orthe like.

For example, for the gate insulating layer 102, a 100-nm-thick siliconoxide film is formed by a sputtering method. It is needless to say thatthe gate insulating layer 102 is not limited to such a silicon oxidefilm. The gate insulating layer 102 may be formed with a single layer ora stacked layer using any of insulating films such as a siliconoxynitride film, a silicon nitride film, an aluminum oxide film, analuminum nitride film, an aluminum oxynitride film, and a tantalum oxidefilm. In the case of having a stacked structure, for example, a siliconnitride film may be formed by a PCVD method, and a silicon oxide filmmay be formed by a sputtering film thereover. In the case where asilicon oxynitride film, a silicon nitride film, or the like is used asthe gate insulating layer 102, an impurity from the glass substrate,sodium for example, can be blocked from diffusing into and entering anoxide semiconductor to be formed later above the gate insulating layer102.

Next, an oxide semiconductor film including SiO_(x) is formed over thegate insulating layer 102. The oxide semiconductor film is formed withuse of an oxide semiconductor target containing In (indium), Ga(gallium), and Zn (zinc), in which SiO₂ is included at 2 wt %. Inclusionof SiO_(x) in an oxide semiconductor makes an oxide semiconductor filmto be formed easy to be amorphous. In addition, when heat treatment isperformed in a process after formation of the oxide semiconductor film,the oxide semiconductor film including SiO_(x) can be prevented frombeing crystallized.

Next, an oxynitride film which does not include SiO_(x) is formed overthe oxide semiconductor film including SiO_(x) by a sputtering method.Sputtering is performed in an atmosphere containing a nitrogen gas withuse of an oxide semiconductor target containing Sn (tin) and Zn (zinc)(SnO₂:ZnO=1:1), so that a Sn—Zn—O—N-based non-single-crystal film isformed.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method, and a pulsed DC sputtering method in which a bias isapplied in a pulsed manner.

In addition, there is a multi-source sputtering apparatus in which aplurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or a film of plural kinds ofmaterials can be formed by electric discharge at the same time in thesame chamber.

In addition, there are also a sputtering apparatus provided with amagnet system inside the chamber and used for a magnetron sputtering,and a sputtering apparatus used for an ECR sputtering in which plasmagenerated with the use of microwaves is used without using glowdischarge.

Furthermore, as a deposition method by sputtering, there are also areactive sputtering method in which a target substance and a sputteringgas component are chemically reacted with each other during depositionto form a thin compound film thereof, and a bias sputtering method inwhich a voltage is also applied to a substrate during deposition.

Next, a photolithography step is performed. A resist mask is formed, andthe Sn—Zn—O—N-based non-single-crystal film is selectively ethed. Then,with use of the same mask, the In—Ga—Zn—O-based non-single-crystal filmincluding SiO_(x) is selectively etched. After etching, the resist maskis removed.

Next, a photolithography step is performed. A new resist mask is formed,and an unnecessary portion (part of the gate insulating layer) isremoved by etching, so that a contact hole which reaches an electrodelayer or a wiring formed of the same material as the gate electrodelayer is formed. This contact hole is provided for direct contact with aconductive film formed later. For example, in a driving circuit portion,a contact hole is formed when a thin film transistor whose gateelectrode layer is direct contact with the source or drain electrodelayer or a terminal that is electrically connected to a gate wiring of aterminal portion is formed. Note that an example of forming the contacthole for direct connection with the conductive film to be formed laterby the photolithography step is described, but there is no particularlimitation. A contact hole reaching the gate electrode layer may beformed later in the same step as the step in which a contact hole forconnection to a pixel electrode may be formed, and electrical connectionmay be performed with use of the same material as the pixel electrode.When the electrical connection is performed with use of the samematerial as the pixel electrode, the number of masks can be reduced byone.

Then, a conductive film made of a metal material is formed over theSn—Zn—O—N-based non-single-crystal film by a sputtering method or avacuum evaporation method.

As the material of the conductive film, there are an element selectedfrom Al, Cr, Ta, Ti, Mo, and W, an alloy containing any of theseelements, an alloy film containing a combination of any of theseelements, and the like. Further, in the case of performing heattreatment at 200° C. to 600° C. later, the conductive film preferablyhas heat resistance against such heat treatment. Since use of Al alonebrings disadvantages such as low resistance and being easily corroded,aluminum is used in combination with a conductive material having heatresistance. As the conductive material having heat resistance which isused in combination with Al, any of the following materials may be used:an element selected from titanium (Ti), tantalum (Ta), tungsten (W),molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc), analloy containing any of these above elements, an alloy film containingthese elements in combination, and a nitride containing any of theseabove elements as a component.

In this embodiment, the conductive film has a single-layer structure ofa titanium film. Alternatively, the conductive film may have a two-layerstructure where a titanium film is stacked over an aluminum film. Stillalternatively, the conductive film may have a three-layer structurewhere a Ti film, an aluminum film including Nd (Al—Nd) is stacked overthe Ti film, and a Ti film is formed thereover. The conductive film mayhave a single-layer structure of an aluminum film including silicon.

Next, a photolithography step is performed. A resist mask is formed, andunnecessary portions are removed by etching, so that the source anddrain electrode layers 105 a and 105 b and the source and drain regions104 a and 104 b are formed in the pixel portion and source and drainelectrode layers and source and drain regions are formed in the drivercircuit portion. An etching method at this time is wet etching or dryetching. For example, when an aluminum film or an aluminum-alloy film isused as the conductive film, wet etching using a mixed solution ofphosphoric acid, acetic acid, and nitric acid can be carried out. Here,the conductive film that is a Ti film is etched by wet etching, so thatthe source and drain electrode layers are formed, and theSn—Zn—O—N-based non-single-crystal film is etched, so that the sourceand drain regions 104 a and 104 b are formed. In this etching step, anexposed region of the oxide semiconductor film including SiO_(x) is alsopartly etched, so that the oxide semiconductor layer 103 includingSiO_(x) is formed.

In addition, in this photolithography step, a second terminal 122 formedfrom the same material as the source and drain electrode layers 105 aand 105 b is also left in the terminal portion. Note that the secondterminal 122 is electrically connected to a source wiring (a sourcewiring including the source or drain electrode layer 105 a or 105 b).

Through the above steps, the thin film transistor 170 in which the oxidesemiconductor layer 103 including SiO_(x) serves as a channel formationregion can be formed in the pixel portion.

In addition, in the terminal portion, a connection electrode 120 isdirectly connected to the first terminal 121 of the terminal portionthrough a contact hole formed in the gate insulating film. Note thatalthough not illustrated in this embodiment, a source or drain wiring ofthe thin film transistor of the driver circuit is directly connected tothe gate electrode through the same steps as the above-described steps.

Then, heat treatment (including photo-annealing) is performed at 200° C.to 600° C., and typically, 300° C. to 500° C. Here, heat treatment isperformed in a nitrogen atmosphere in a furnace at 350° C. for one hour.Through this heat treatment, rearrangement at the atomic level occurs inthe In—Ga—Zn—O-based non-single-crystal film including SiO_(x). Inaddition, the oxide semiconductor layer 103 including SiO_(x) can beprevented from being crystallized in heat treatment because of inclusionof SiO_(x); thus the oxide semiconductor layer 103 can keep an amorphousstructure. Note that there is no particular limitation on when toperform the heat treatment, as long as it is performed after theSn—Zn—O—N-based non-single-crystal film is formed. For example, the heattreatment may be performed after a pixel electrode is formed.

Next, the resist mask is removed, and the protective insulating layer106 is formed to cover the thin film transistor 170.

Then, a photolithography step is performed. A resist mask is formed, andthe protective insulating layer 106 is etched, so that a contact holereaching the source or drain electrode layer 105 b is formed. Inaddition, a contact hole reaching the second terminal 122 and a contacthole reaching the connection electrode 120 are also formed by thisetching.

After that, the resist mask is removed, and then a transparentconductive film is formed. The transparent conductive film is formedusing indium oxide (In₂O₃), indium tin oxide (In₂O₃—SnO₂, abbreviated toITO), or the like by a sputtering method, a vacuum evaporation method,or the like. Etching treatment of such a material is performed with ahydrochloric acid based solution. However, since a residue is easilygenerated particularly in etching ITO, indium oxide-zinc oxide alloy(In₂O₃—ZnO) may be used to improve etching processability.

Next, a photolithography step is performed. A resist mask is formed, andan unnecessary portion is removed by etching, so that a pixel electrodelayer 110 is formed. In this photolithography step, a storage capacitoris formed by the capacitor wiring 108 and the pixel electrode layer 110using the gate insulating layer 102 and the protective insulating layer106 in the capacitor portion as a dielectric. Furthermore, in thisphotolithography step, the first terminal and the second terminal arecovered with the resist mask so that transparent conductive films 128and 129 remain in the terminal portion. The transparent conductive films128 and 129 serve as electrodes or wirings that are used for connectionwith an FPC. The transparent conductive film 128 formed over theconnection electrode 120 that is directly connected to the firstterminal 121 serves as a terminal electrode for connection whichfunctions as an input terminal for the gate wiring. The transparentconductive film 129 formed over the second terminal 122 serves as aterminal electrode for connection which functions as an input terminalfor the source wiring.

Note that, in this embodiment, an example in which the storage capacitoris formed by the capacitor wiring 108 and the pixel electrode layer 110using the gate insulating layer 102 and the protective insulating layer106 as the dielectrics is described; however, there is no particularlimitation. A structure may also be employed, in which an electrodeincluding the same material as the source and drain electrodes isprovided above the capacitor wiring and a storage capacitor is formed bythe electrode and the capacitor wiring using the gate insulating layer102 therebetween as a dielectric, and the electrode and the pixelelectrode layer are electrically connected.

Then, the resist mask is removed. FIG. 3 is a cross-sectional view atthis stage. Note that, a top view of the thin film transistor 170 in thepixel portion at this stage corresponds to FIG. 4.

A cross-sectional view taken along line A1-A2 and line B1-B2 of FIG. 4corresponds to FIG. 3. FIG. 3 illustrates a cross-sectional structure ofthe thin film transistor 170 in the pixel portion, a cross-sectionalstructure of a capacitor portion in the pixel portion, and across-sectional structure of the terminal portion.

Further, FIGS. 5A and 5B are a cross-sectional view of a source wiringterminal portion and a top view thereof, respectively. FIG. 5A is across-sectional view taken along line D1-D2 of FIG. 5B. In FIG. 5A, atransparent conductive film 155 formed over a protective insulatinglayer 106 is a connection terminal electrode which functions as an inputterminal. Furthermore, in FIG. 5A, in the terminal portion, an electrode156 formed from the same material as the gate wiring is located belowand overlapped with a second terminal 150, which is electricallyconnected to the source wiring, with a gate insulating layer 152interposed therebetween. The electrode 156 is not electrically connectedto the second terminal 150. When the electrode 156 is set to, forexample, floating, GND, or 0 V such that the potential of the electrode156 is different from the potential of the second terminal 150, acapacitor for preventing noise or static electricity can be formed. Thesecond terminal 150 is electrically connected to the transparentconductive film 155 with the protective insulating layer 106 interposedtherebetween.

A plurality of gate wirings, source wirings, and capacitor wirings areprovided depending on the pixel density. Also in the terminal portion,the first terminal at the same potential as the gate wiring, the secondterminal at the same potential as the source wiring, the third terminalat the same potential as the capacitor wiring, and the like are eacharranged in plurality. There is no particular limitation on the numberof each of the terminals, and the number of the terminals may bedetermined by a practitioner as appropriate.

Thus, the pixel portion which includes the thin film transistor 170including an oxide semiconductor layer including SiO_(x) and the storagecapacitor; and the terminal portion can be completed. In addition, adriver circuit can be formed over the same substrate.

When an active matrix liquid crystal display device is manufactured, anactive matrix substrate and a counter substrate provided with a counterelectrode are bonded to each other with a liquid crystal layerinterposed therebetween. Note that a common electrode is provided overthe active matrix substrate to be electrically connected to the counterelectrode provided on the counter substrate, and a terminal is providedin a terminal portion to be electrically connected to the commonelectrode. This terminal is provided for setting the common electrode ata fixed potential such as GND or 0 V.

Further, in this embodiment, a pixel structure is not limited to that ofFIG. 4. An example of a top view different from FIG. 4 is illustrated inFIG. 6. FIG. 6 illustrates an example in which a capacitor wiring is notprovided but a pixel electrode overlaps with a gate wiring of anadjacent pixel, with a protective insulating film and a gate insulatinglayer therebetween to form a storage capacitor. In that case, acapacitor wiring and a third terminal which is connected to thecapacitor wiring can be omitted. Note that in FIG. 6, the same portionsas those in FIG. 4 are denoted by the same reference numerals.

In an active matrix liquid crystal display device, display patterns areformed on a screen by driving pixel electrodes arranged in a matrix. Inmore detail, when voltage is applied between a selected pixel electrodeand a counter electrode that corresponds to the selected pixelelectrode, a liquid crystal layer provided between the pixel electrodeand the counter electrode is optically modulated, and this opticalmodulation is recognized as a display pattern by an observer.

In displaying moving images, a liquid crystal display device has aproblem that a long response time of liquid crystal molecules themselvescauses afterimages or blurring of moving images. In order to improve themoving-image characteristics of the liquid crystal display device, adriving method called black insertion is employed in which black isdisplayed on the whole screen every other frame period.

Moreover, a driving method called double-frame rate driving may beemployed in which the vertical synchronizing frequency is 1.5 times ormore, preferably twice or more as high as a conventional verticalsynchronizing frequency so as to improve the moving-imagecharacteristics.

Further alternatively, in order to improve the moving-imagecharacteristics of a liquid crystal display device, a driving method maybe employed in which a plurality of LEDs (light-emitting diodes) or aplurality of EL light sources are used to form a surface light source asa backlight, and each light source of the surface light source isindependently driven in a pulsed manner in one frame period. As thesurface light source, three or more kinds of LEDs may be used and an LEDemitting white light may be used. Since a plurality of LEDs can becontrolled independently, the light emission timing of LEDs can besynchronized with the timing at which a liquid crystal layer isoptically modulated. According to this driving method, LEDs can bepartly turned off; therefore, an effect of reducing power consumptioncan be obtained particularly in the case of displaying an image having alarge part on which black is displayed.

By combining these driving methods, the display characteristics of aliquid crystal display device, such as moving-image characteristics, canbe improved as compared to those of conventional liquid crystal displaydevices.

According to this embodiment, a display device having high electricalcharacteristics and high reliability can be provided at low costs.

This embodiment can be freely combined with Embodiment 1.

(Embodiment 3)

In this embodiment, an example in which light exposure using amulti-tone mask is performed so that the number of masks is reduced isdescribed.

In addition, described is an example in which indium that is a raremetal the amount of production of which is limited is not used in thecomposition of an oxide semiconductor layer. In addition, described isan example in which gallium that is one kind of rare metal is also notused as a compositional element of an oxide semiconductor layer.

A multi-tone mask can achieve three levels of light exposure: an exposedportion, a half-exposed portion, and an unexposed portion. Light has aplurality of intensity levels by passing through the multi-tone mask.One-time light exposure and development process enables a resist maskwith regions with a plurality of thicknesses (typically, two levels ofthickness) to be formed. Accordingly, by using a multi-tone mask, thenumber of light-exposure masks can be reduced.

As typical examples of a multi-tone mask, there are a gray-tone mask, ahalf-tone mask, and the like.

A gray-tone mask includes a light-transmitting substrate, and alight-shielding portion and a diffraction grating which are formed overthe light-transmitting substrate. The light transmittance of thelight-shielding portion is 0%. On the other hand, the lighttransmittance of the diffraction grating can be controlled by setting aninterval between light-transmitting portions in slit forms, dot forms,or mesh forms to an interval less than or equal to the resolution limitof light used for the exposure. Note that the diffraction grating can beeither in a regular slit form, a regular dot form, or a regular meshform, or in an irregular slit form, an irregular dot form, or anirregular mesh form.

A half-tone mask includes a light-transmitting substrate, and asemi-transmissive portion and a light-shielding portion which are formedover the light-transmitting substrate. The semi-transmissive portion canbe formed using MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like. Thelight-shielding portion can be formed using a light-shielding materialwhich absorbs light, such as chromium or chromium oxide. When thehalf-tone mask is irradiated with light for exposure, the lighttransmittance of the light-shielding portion is 0% and the lighttransmittance of a region where neither the light-shielding portion northe semi-transmissive portion is provided is 100%. The lighttransmittance of the semi-transmissive portion can be controlled in therange of 10% to 70%. The light transmittance of the semi-transmissiveportion can be controlled by the material of the semi-transmissiveportion.

FIGS. 12A to 12E correspond to cross-sectional views illustrating stepsfor manufacturing a thin film transistor 360.

In FIG. 12A, an insulating film 357 is provided over a substrate 350 anda gate electrode layer 351 is provided thereover. In this embodiment, asilicon oxide film (with a thickness of 100 nm) is used as theinsulating film 357. Over the gate electrode layer 351, a gateinsulating layer 352, an oxide semiconductor film 380 including SiO_(x),an oxynitirde film 381, and a conductive film 383 are stacked in thisorder. In this embodiment, an oxide semiconductor containing neither ofindium and gallium, typically a Sn—Zn—O-based oxide semiconductor, or aZn—O-based oxide semiconductor is used as the oxide semiconductor film380 including SiO_(x). In this embodiment, a Sn—Zn—O-based oxidesemiconductor formed by a sputtering method is used as the oxidesemiconductor film 380 including SiO_(x), and a Sn—Zn—O-based oxynitridematerial is used as the oxynitride film 381 which does not includeSiO_(x).

Next, a mask 384 is formed over the gate insulating layer 352, the oxidesemiconductor film 380 including SiO_(x), the oxynitride film 381, andthe conductive film 383.

In this embodiment, an example is described in which light exposureusing a multi-tone (high-tone) mask is performed to form the mask 384.

The light exposure is performed using the multi-tone mask through whichlight has a plurality of intensity levels, and then development isperformed, whereby the mask 384 having regions with different levels ofthickness can be formed as shown in FIG. 12B. The number oflight-exposure masks can be reduced by using a multi-tone mask.

Next, a first etching step is performed using the mask 384 to etch theoxide semiconductor film 380 including SiO_(x), the oxynitirde film 381,and the conductive film 383 into an island shape. Accordingly, apatterned oxide semiconductor layer 390 including SiO_(x), a patternedoxynitride layer 385, and a patterned conductive layer 387 can be formed(see FIG. 12B).

Next, ashing is conducted on the mask 384. As a result, the area andthickness of the mask are reduced. At this time, the resist of the maskin a region with a small thickness (a region overlapping with part ofthe gate electrode layer 351) is removed, and divided masks 388 can beformed (see FIG. 12C).

A second etching step is performed using the masks 388 to etch theoxynitride layer 385 and the conductive layer 387, so that asemiconductor layer 353 including SiO_(x), source and drain regions 354a and 354 b, and source and drain electrode layers 355 a and 355 b areformed (see FIG. 12D). Note that the semiconductor layer 353 includingSiO_(x) is partly etched to become a semiconductor layer having a groove(depression) and also having an end portion which is partly etched andexposed to outside.

When the first etching step is performed on the oxynitride film 381 andthe conductive film 383 by dry etching, the oxynitirde film 381 and theconductive film 383 are etched anisotropically, which makes the endportions of the mask 384 and the end portions of the oxynitride layer385 and the conductive layer 387 to be aligned with each other so as tobecome continuous.

Similarly, when the second etching step is performed on the oxynitridelayer 385 and the conductive layer 387 by dry etching, the oxynitridelayer 385 and the conductive layer 387 are etched anisotropically, whichmakes the end portions of the masks 388, an end portion of thedepression, end portions in the etched region of the oxide semiconductorlayer 353 including SiO_(x), end portions of the source and drainregions 354 a and 354 b, and end portions of the source and drainelectrode layers 355 a and 355 b to be aligned with each other so as tobecome continuous.

Shown in this embodiment is the case where the semiconductor layer 353including SiO_(x) and the source and drain electrode layers 355 a and355 b have the same tapered angle at the respective end portions and arestacked so that the end portions are continuous. However, since theetching rates thereof are different depending on the etching conditionand the materials of the oxide semiconductor layer and the conductivelayer, the tapered angles may be different and the end portions is notnecessarily continuous.

After that, the masks 388 are removed.

Next, heating is performed at 200° C. to 600° C. in an atmospherecontaining oxygen is performed (see FIG. 12E). The semiconductor layer353 includes SiO_(x) which hinders crystallization; thus, thesemiconductor layer including SiO_(x) can keep the amorphous state evenafter heating at 200° C. to 600° C.

Through the above process, the channel-etch type thin film transistor360 including the semiconductor layer 353 including SiO_(x) can bemanufactured.

The use of a resist mask having regions with a plurality of thicknesses(typically, two levels of thickness) formed using a multi-tone mask asin this embodiment enables the number of resist masks to be reduced,which leads to simplification of the manufacturing process and costreduction.

Further, indium and gallium are not used in the oxide semiconductorlayer including SiO_(x) or the oxynitride layer as described in thisembodiment, thereby reducing the cost for a target of an oxidesemiconductor, which leads to cost reduction.

Accordingly, a semiconductor device can be manufactured at low cost withhigh productivity.

(Embodiment 4)

In this embodiment, an example of a channel stop type thin filmtransistor 430 is described using FIGS. 13A and 13B. FIG. 13Billustrates an example of a top view of a thin film transistor,cross-sectional view along dotted line Z1-Z2 of which corresponds toFIG. 13A. Described is an example in which an oxide semiconductormaterial which dies not contain indium is used in an oxide semiconductorlayer in the thin film transistor 430.

In FIG. 13A, a gate electrode 401 is provided over a substrate 400.Then, over a gate insulating layer 402 covering the gate electrode 401,an oxide semiconductor layer 403 including SiO_(x) is provided.

In this embodiment, a Ga—Zn—O-based oxide semiconductor formed by asputtering method is used as the oxide semiconductor layer 403 includingSiO_(x). In this embodiment, the oxide semiconductor layer 403 includingSiO_(x) is formed using an oxide semiconductor which does not containindium, typically, a Ga—Sn—Zn—O-based, Ga—Zn—O-based, Sn—Zn—O-based,Ga—Sn—O-based or Zn—O-based oxide semiconductor which does not containindium.

Next, a channel protective layer 418 is provided so as to be in contactwith and over the oxide semiconductor layer 403 including SiO_(x). Thechannel protective layer 418 is provided, whereby damage to a channelformation region in the oxide semiconductor layer 403 including SiO_(x),which is caused in the manufacturing process (reduction in filmthickness due to plasma or etchant in etching, oxidation, etc.), can beprevented. Accordingly, the reliability of the thin film transistor 430can be improved.

The channel protective layer 418 can be formed using an inorganicmaterial (such as silicon oxide, silicon nitride, silicon oxynitride, orsilicon nitride oxide). As a manufacturing method of the channelprotective layer 418, a vapor phase growth method such as a plasma CVDmethod or a thermal CVD method, or a sputtering method can be used. Theshape of the channel protective layer 418 is processed after the filmdeposition. In this embodiment, a silicon oxide film is deposited by asputtering method and processed by etching using a mask formed byphotolithography, so that the channel protective layer 418 is formed.

Next, source and drain regions 406 a and 406 b are formed over thechannel protective layer 418 and the oxide semiconductor layer 403including SiO_(x). In this embodiment, the source and drain regions 406a and 406 b are formed using a Ga—Zn—O—N-based non-single-crystal filmis used. Alternatively, the source and drain regions 406 a and 406 b maybe formed using a Zn—O-based non-single-crystal film including nitrogen,that is, a Zn—O—N non-single-crystal film.

Next, a first wiring 409 and a second wiring 410 are formed over thesource and drain regions 406 a and 406 b. The first wiring 409 and thesecond wiring 410 are formed using an element selected from Al, Cr, Ta,T1, Mo, and W, an alloy containing any of these elements, an alloy filmcontaining a combination of any of these elements, or the like.

By the provision of the source and drain regions 406 a and 406 b, thefirst wiring 409 and the second wiring 410 which are metal layers canhave a good junction with the oxide semiconductor layer 403 includingSiO_(x), so that stable operation can be realized in terms of heat incomparison with a Schottky junction. In addition, it is effective thatthe source and drain regions 406 a and 406 b are provided in order thatcarriers of a channel are supplied (on the source side), that carriersof a channel are absorbed stably (on the drain side), or that aresistive component is not produced in an interface between a wiring andan oxide semiconductor layer.

Next, heat treatment is preferably performed at 200° C. to 600° C.,typically, 300° C. to 500° C. Here, heat treatment is performed in afurnace at 350° C. for one hour in an air atmosphere. Through this heattreatment, rearrangement at the atomic level occurs in the oxidesemiconductor layer including SiO_(x). Since strain energy whichinhibits carrier movement is released by the heat treatment, the heattreatment (including optical annealing) is important. In addition,SiO_(x) included in the oxide semiconductor layer 403 can prevent theoxide semiconductor layer 403 from being crystallized in heat treatment;thus, the oxide semiconductor layer 403 can keep the amorphousstructure. There is no particular limitation on when to perform the heattreatment as long as it is performed after the formation of the oxidesemiconductor layer 403 including SiO_(x); for example, it can beperformed after the formation of the pixel electrode.

Further, indium is not used in the oxide semiconductor layer as is inthis embodiment, which leads to no use of indium that might be depletedas a material.

This embodiment can be combined with any of the other embodiments asappropriate.

(Embodiment 5)

In this embodiment, an example in which an inverter circuit is formedusing two n-channel thin film transistors 760 and 761 is described.Described in this embodiment is an example in which gallium is notcontained in each oxide semiconductor layer of the thin film transistors760 and 761.

A driver circuit for driving a pixel portion is formed using an invertercircuit, a capacitor, a resistor, and the like. When two n-channel TFTsare combined to form an inverter circuit, there are two types ofcombinations: a combination of an enhancement type transistor and adepletion type transistor (hereinafter, a circuit formed by such acombination is referred to as an “EDMOS circuit”) and a combination ofenhancement type TFTs (hereinafter, a circuit formed by such acombination is referred to as an “EEMOS circuit”). Note that when thethreshold voltage of the n-channel TFT is positive, the n-channel TFT isdefined as an enhancement type transistor, while when the thresholdvoltage of the n-channel TFT is negative, the n-channel TFT is definedas a depletion type transistor; this definition is applied throughoutthe specification.

The pixel portion and the driver circuit are formed over the samesubstrate. In the pixel portion, ON/OFF of voltage application to apixel electrode is switched using enhancement type transistors arrangedin a matrix.

FIG. 14A illustrates a cross-sectional structure of the inverter circuitof the driver circuit. In FIG. 14A, a first gate electrode 741 and asecond gate electrode 742 are provided over a substrate 740. The firstgate electrode 741 and the second gate electrode 742 each can be formedto have a single-layer or stacked-layer structure using any of a metalmaterial such as molybdenum, titanium, chromium, tantalum, tungsten,aluminum, copper, neodymium, or scandium, and an alloy material whichcontains any of these materials as a main component.

Further, a first wiring 749, a second wiring 750, and a third wiring 751are provided over a gate insulating layer 743 that covers the first gateelectrode 741 and the second gate electrode 742. The second wiring 750is directly connected to the second gate electrode 742 through a contacthole 744 formed in the gate insulating layer 743.

Further, a source or drain region 755 a is formed over the first wiring749, a source or drain region 755 b and a source or drain region 756 aare formed over the second wiring 750, and a source or drain region 756b is formed over the third wiring 751. In this embodiment, the sourceand drain regions 755 a and 755 b and the source and drain regions 756 aand 756 b are formed using a Zn—O—N-based non-single-crystal film whichdoes not include SiO_(x). Alternatively, the source and drain regions755 a and 755 b and the source and drain regions 756 a and 756 b may beformed using an In—Zn—O—N-based non-single-crystal film includingnitrogen may be used.

Further, a first oxide semiconductor layer 745 including SiO_(x) isprovided in a position which overlaps with the first gate electrode 741and which is over the first and second wirings 749 and 750 with thesource and drain regions 755 a and 755 b interposed therebetween. Asecond oxide semiconductor layer 747 including SiO_(x) is provided in aposition which overlaps with the second gate electrode 742 and which isover the second and third wirings 750 and 751 with the source and drainregions 756 a and 756 b interposed therebetween.

In this embodiment, the first oxide semiconductor layer 745 includingSiO_(x) and the second oxide semiconductor layer 747 including SiO_(x)are formed using an In—Zn—O-based oxide semiconductor by a sputteringmethod. For the first oxide semiconductor layer 745 including SiO_(x)and the second oxide semiconductor layer 747 including SiO_(x), an oxidesemiconductor which does not contain gallium, typically, anIn—Sn—Zn—O-based, In—Zn—O-based, In—Sn—O-based, Sn—Zn—O-based, orZn—O-based oxide semiconductor, which does not contain gallium, is used.

The first thin film transistor 760 includes the first gate electrode 741and the first oxide semiconductor layer 745 including SiO_(x) whichoverlaps with the first gate electrode 741 with the gate insulatinglayer 743 interposed therebetween. The first wiring 749 is a powersupply line at a ground potential (a ground power supply line). Thispower supply line at a ground potential may be a power supply line towhich a negative voltage VDL is applied (a negative power supply line).

The second thin film transistor 761 includes the second gate electrode742 and the second oxide semiconductor layer 747 including SiO_(x) whichoverlaps with the second gate electrode 742 with the gate insulatinglayer 743 interposed therebetween. The third wiring 751 is a powersupply line to which a positive voltage VDD is applied (a positive powersupply line).

As illustrated in FIG. 14A, the second wiring 750 which is electricallyconnected to both the first oxide semiconductor layer 745 includingSiO_(x) and the second oxide semiconductor layer 747 including SiO_(x)is directly connected to the second gate electrode 742 of the secondthin film transistor 761 through the contact hole 744 formed in the gateinsulating layer 743. Direct connection between the second wiring 750and the second gate electrode 742 can provide good contact and reducethe contact resistance. In comparison with the case where the secondgate electrode 742 and the second wiring 750 are connected to each otherwith a conductive film, e.g., a transparent conductive film, interposedtherebetween, reduction in the number of contact holes and reduction inan area occupied by the driver circuit in accordance with the reductionin the number of contact holes can be achieved.

A top view of the inverter circuit of the driver circuit is illustratedin FIG. 14B. A cross section taken along dotted line Y1-Y2 in FIG. 14Bcorresponds to FIG. 14A.

As in this embodiment, gallium is not used in the oxide semiconductorlayer, which leads to no use of gallium which is a high cost material.

This embodiment can be combined with any of the other embodiments asappropriate.

(Embodiment 6)

In this embodiment, an example of a top-gate type thin film transistor330 is described reference to FIGS. 15A and 15B. FIG. 15B illustrates anexample of a top view of a thin film transistor, a cross-sectional viewalong dotted line P1-P2 of which corresponds to FIG. 15A.

In FIG. 15A, over a substrate 300, a conductive film and an oxynitridefilm are stacked, and etching is performed, so that a first wiring 309and a second wiring 310 are formed and oxynitride layers 304 a and 304 bare formed thereover. The first wiring 309 and the second wiring 310serve as source and drain electrodes. The oxynitride layers 304 a and304 b serve as source and drain regions and are formed using anIn—Ga—Zn—O—N-based non-single-crystal film.

Next, an oxide semiconductor layer 305 including SiO_(x) is formed so asto cover an exposed region of the substrate 300 and the oxynitridelayers 304 a and 304 b. In this embodiment, the oxide semiconductorlayer 305 including SiO_(x) is formed using a Sn—Zn—O-based oxidesemiconductor including SiO_(x).

Next, a gate insulating layer 303 covering the oxide semiconductor layer305, the first wiring 309 m and the second wiring 310 is formed.

Next, heat treatment is preferably performed at 200° C. to 600° C.,typically, 300° C. to 500° C. Here, heat treatment is performed in afurnace at 350° C. for one hour in an air atmosphere. Through this heattreatment, rearrangement at the atomic level occurs in the oxidesemiconductor layer 305 including SiO_(x). Since strain energy whichinhibits carrier movement is released by the heat treatment, the heattreatment (including optical annealing) is important.

Next, a gate electrode 301 is provided in a position which is over thegate insulating layer 303 and overlaps with a region where the oxidesemiconductor layer 305 including SiO_(x) is in contact with thesubstrate 300.

Through the above process, the top-gate type thin film transistor 330can be manufactured.

This embodiment can be combined with any of the other embodiments asappropriate.

(Embodiment 7)

In this embodiment, an example of a top-gate type thin film transistor630 is described reference to FIGS. 16A and 16B. FIG. 16B illustrates anexample of a top view of a thin film transistor, a cross-sectional viewalong dotted line R1-R2 of which corresponds to FIG. 16A.

In FIG. 16A, an oxide semiconductor layer 605 including SiO_(x) isformed over a substrate 600. In this embodiment, the oxide semiconductorlayer 605 is formed using a Sn—Zn—O-based oxide semiconductor includingSiO_(x).

Next, source and drain regions 606 a and 606 b are formed over the oxidesemiconductor layer 605. In this embodiment, the source and drainregions 606 a and 606 b are formed using a Ga—Zn—O-basednon-single-crystal film. Alternatively, the source and drain regions 606a and 606 b may be formed using a Ga—Zn—O-based non-single-crystal filmincluding nitrogen, that is, a Ga—Zn—O—N-based non-single-crystal film(also called a GZON film).

Next, a first wiring 609 and a second wiring 610 are formed over thesource and drain regions 606 a and 606 b. Note that the first and secondwirings 609 and 612 serve as source and drain electrodes.

Then, a gate insulating layer 603 is formed over the first and secondwirings 609 and 610.

Next, a gate electrode 601 is provided in a position which is over thegate insulating layer 603 and overlaps with a region where the oxidesemiconductor layer 605 is in contact with the gate insulating layer603.

Next, heat treatment is preferably performed at 200° C. to 600° C.,typically, 300° C. to 500° C. Here, heat treatment is performed in afurnace at 350° C. for one hour in an air atmosphere. Through this heattreatment, rearrangement at the atomic level occurs in the oxidesemiconductor layer 605. Since strain energy which inhibits carriermovement is released by the heat treatment, the heat treatment(including optical annealing) is important.

Through the above process, the top-gate type thin film transistor 630can be manufactured.

(Embodiment 8)

An example is described below, in which at least part of a drivercircuit and a thin film transistor arranged in a pixel portion areformed over the same substrate in a display device which is one exampleof a semiconductor device.

The thin film transistor arranged in the pixel portion is formedaccording to Embodiment 2, so that a channel formation region is formedusing an oxide semiconductor layer including SiO_(x) and source anddrain regions are formed using an oxide semiconductor includingnitrogen. The thin film transistor is formed to be an n-channel TFT, andthus part of a driver circuit that can be formed with an n-channel TFTis formed over the same substrate as the thin film transistor of thepixel portion.

FIG. 17A illustrates an example of a block diagram of an active matrixliquid crystal display device which is an example of a semiconductordevice. The display device illustrated in FIG. 17A includes, over asubstrate 5300, a pixel portion 5301 including a plurality of pixelsthat are each provided with a display element; a scan line drivercircuit 5302 that selects a pixel; and a signal line driver circuit 5303that controls a video signal input to the selected pixel.

In addition, the thin film transistor described in Embodiment 2 is ann-channel TFT, and a signal line driver circuit including the n-channelTFT is described with reference to FIG. 18.

The signal line driver circuit in FIG. 18 includes a driver IC 5601,switch groups 5602_1 to 5602_M, a first wiring 5611, a second wiring5612, a third wiring 5613, and wirings 5621_1 to 5621_M. Each of theswitch groups 5602_1 to 5602_M includes a first thin film transistor5603 a, a second thin film transistor 5603 b, and a third thin filmtransistor 5603 c.

The pixel portion 5301 is connected to the signal line driver circuit5303 by a plurality of signal lines S1 to Sm (not shown) which extend ina column direction from the signal line driver circuit 5303, and to thescan line driver circuit 5302 by a plurality of scan lines G1 to Gn (notshown) that extend in a row direction from the scan line driver circuit5302. The pixel portion 5301 includes a plurality of pixels (not shown)arranged in matrix so as to correspond to the signal lines S1 to Sm andthe scan lines G1 to Gn. Each pixel is connected to a signal line Sj(one of the signal lines S1 to Sm) and a scan line Gi (one of the scanlines G1 to Gn).

The driver IC 5601 is connected to the first wiring 5611, the secondwiring 5612, the third wiring 5613, and the wirings 5621_1 to 5621_M.Each of the switch groups 5602_1 to 5602_M is connected to the firstwiring 5611, the second wiring 5612, the third wiring 5613, and thewirings 5621_1 to 5621_M are connected to the switch groups 5602_1 to5602_M, respectively. Each of the wirings 5621_1 to 5621_M is connectedto three signal lines via the first thin film transistor 5603 a, thesecond thin film transistor 5603 b, and the third thin film transistor5603 c. For example, the wiring 5621_J of the J-th column (one of thewirings 5621_1 to 5621_M) is connected to a signal line Sj−1, a signalline Sj, and a signal line Sj+1 via the first thin film transistor 5603a, the second thin film transistor 5603 b, and the third thin filmtransistor 5603 c which are included in the switch group 5602_J.

A signal is input to each of the first wiring 5611, the second wiring5612, and the third wiring 5613.

Note that the driver IC 5601 is preferably formed over a singlecrystalline substrate. Further, the switch groups 5602_1 to 5602_M arepreferably formed over the same substrate as the pixel portion is.Therefore, the driver IC 5601 and the switch groups 5602_1 to 5602_M arepreferably connected through an FPC or the like.

Next, operation of the signal line driver circuit shown in FIG. 18 isdescribed with reference to a timing chart in FIG. 19. The timing chartin FIG. 19 illustrates a case where the scan line Gi of the i-th row isselected. A selection period of the scan line Gi of the i-th row isdivided into a first sub-selection period T1, a second sub-selectionperiod T2, and a third sub-selection period T3. In addition, the signalline driver circuit in FIG. 18 operates similarly to that in FIG. 19even when a scan line of another row is selected.

Note that the timing chart in FIG. 19 shows a case where the wiring5621_J of the J-th column is connected to the signal line Sj−1, thesignal line Sj, and the signal line Sj+1 via the first thin filmtransistor 5603 a, the second thin film transistor 5603 b, and the thirdthin film transistor 5603 c.

The timing chart in FIG. 19 shows timing at which the scan line Gi ofthe i-th row is selected, timing 5703 a of on/off of the first thin filmtransistor 5603 a, timing 5703 b of on/off of the second thin filmtransistor 5603 b, timing 5703 c of on/off of the third thin filmtransistor 5603 c, and a signal 5721_J input to the wiring 5621_J of theJ-th column.

In the first sub-selection period T1, the second sub-selection periodT2, and the third sub-selection period T3, different video signals areinput to the wirings 5621_1 to 5621_M. For example, a video signal inputto the wiring 5621_J in the first sub-selection period T1 is input tothe signal line Sj−1, a video signal input to the wiring 5621_J in thesecond sub-selection period T2 is input to the signal line Sj, and avideo signal input to the wiring 5621_J in the third sub-selectionperiod T3 is input to the signal line Sj+1. The video signals input tothe wiring 5621_J in the first sub-selection period T1, the secondsub-selection period T2, and the third sub-selection period T3 aredenoted by Data_j−1, Data_j, and Data_j+1, respectively.

As illustrated in FIG. 19, in the first sub-selection period T1, thefirst thin film transistor 5603 a is turned on, and the second thin filmtransistor 5603 b and the third thin film transistor 5603 c are turnedoff. At this time, Data_j−1 input to the wiring 5621_J is input to thesignal line Sj−1 via the first thin film transistor 5603 a. In thesecond sub-selection period T2, the second thin film transistor 5603 bis turned on, and the first thin film transistor 5603 a and the thirdthin film transistor 5603 c are turned off. At this time, Data_j inputto the wiring 5621_J is input to the signal line Sj via the second thinfilm transistor 5603 b. In the third sub-selection period T3, the thirdthin film transistor 5603 c is turned on, and the first thin filmtransistor 5603 a and the second thin film transistor 5603 b are turnedoff. At this time, Data_j+1 input to the wiring 5621_J is input to thesignal line Sj+1 via the third thin film transistor 5603 c.

As described above, in the signal line driver circuit in FIG. 18, bydividing one gate selection period into three, video signals can beinput to three signal lines from one wiring 5621 during one gateselection period. Therefore, in the signal line driver circuit in FIG.18, the number of connections between the substrate provided with thedriver IC 5601 and the substrate provided with the pixel portion can beapproximately ⅓ of the number of signal lines. The number of connectionsis reduced to approximately ⅓ of the number of the signal lines, so thatreliability, yield, etc., of the signal line driver circuit in FIG. 18can be improved.

Note that there are no particular limitations on the arrangement, thenumber, a driving method, and the like of the thin film transistors, aslong as one gate selection period is divided into a plurality ofsub-selection periods and video signals are input to a plurality ofsignal lines from one wiring in the respective sub-selection periods asillustrated in FIG. 18.

For example, when video signals are input to three or more signal linesfrom one wiring in three or more sub-selection periods, it is onlynecessary to add a thin film transistor and a wiring for controlling thethin film transistor. Note that when one selection period is dividedinto four or more sub-selection periods, one sub-selection periodbecomes short. Therefore, one selection period is preferably dividedinto two or three sub-selection periods.

As another example, one gate selection period may be divided into apre-charge period Tp, the first sub-selection period T1, the secondsub-selection period T2, and the third sub-selection period T3 asillustrated in a timing chart in FIG. 20. The timing chart in FIG. 20shows the timing at which the scan line Gi of the i-th row is selected,timing 5803 a at which the first thin film transistor 5603 a is turnedon/off, timing 5803 b at which the second thin film transistor 5603 b isturned on/off, timing 5803 c at which the third thin film transistor5603 c is turned on/off, and a signal 5821_J input to the wiring 5621_Jof the J-th column. As illustrated in FIG. 20, the first thin filmtransistor 5603 a, the second thin film transistor 5603 b, and the thirdthin film transistor 5603 c are tuned on in the precharge period Tp. Atthis time, precharge voltage Vp input to the wiring 5621_J is input toeach of the signal line Sj−1, the signal line Sj, and the signal lineSj+1 via the first thin film transistor 5603 a, the second thin filmtransistor 5603 b, and the third thin film transistor 5603 c. In thefirst sub-selection period T1, the first thin film transistor 5603 a isturned on, and the second thin film transistor 5603 b and the third thinfilm transistor 5603 c are turned off. At this time, Data_j−1 input tothe wiring 5621_J is input to the signal line Sj−1 via the first thinfilm transistor 5603 a. In the second sub-selection period T2, thesecond thin film transistor 5603 b is turned on, and the first thin filmtransistor 5603 a and the third thin film transistor 5603 c are turnedoff. At this time, Data_j input to the wiring 5621_J is input to thesignal line Sj via the second thin film transistor 5603 b. In the thirdsub-selection period T3, the third thin film transistor 5603 c is turnedon, and the first thin film transistor 5603 a and the second thin filmtransistor 5603 b are turned off. At this time, Data_j+1 input to thewiring 5621_J is input to the signal line Sj+1 via the third thin filmtransistor 5603 c.

As described above, in the signal line driver circuit in FIG. 18 towhich the timing chart in FIG. 20 is applied, the video signal can bewritten to the pixel at high speed because the signal line can beprecharged by providing a precharge selection period before asub-selection period. Note that portions in FIG. 20 which are similar tothose of FIG. 19 are denoted by common reference numerals and detaileddescription of the portions which are the same and portions which havesimilar functions is omitted.

Further, a structure of a scan line driver circuit is described. Thescan line driver circuit includes a shift register and a buffer.Additionally, the scan line driver circuit may include a level shifterin some cases. In the scan line driver circuit, when the clock signal(CLK) and the start pulse signal (SP) are input to the shift register, aselection signal is produced. The selection signal produced is bufferedand amplified by the buffer, and the resulting signal is supplied to acorresponding scan line. Gate electrodes of transistors in pixels of oneline are connected to the scan line. Further, since the transistors inthe pixels of one line have to be turned on at the same time, a bufferwhich can feed a large amount of current is used.

One mode of a shift register which is used for part of a scan linedriver circuit is described with reference to FIG. 21 and FIG. 22.

FIG. 21 illustrates a circuit configuration of the shift register. Theshift register illustrated in FIG. 21 includes a plurality offlip-flops, flip-flops 5701_1 to 5701 _(—) n. Further, the shiftregister operates by inputting a first clock signal, a second clocksignal, a start pulse signal, and a reset signal.

Connection relations of the shift register in FIG. 21 are described. Inthe i-th stage flip-flop 5701 _(—) i (one of the flip-flops 5701_1 to5701 _(—) n) in the shift register of FIG. 21, a first wiring 5501illustrated in FIG. 22 is connected to a seventh wiring 5717 _(—)−1; asecond wiring 5502 illustrated in FIG. 22 is connected to a seventhwiring 5717 _(—) i+1; a third wiring 5503 illustrated in FIG. 22 isconnected to a seventh wiring 5717 _(—) i; and a sixth wiring 5506illustrated in FIG. 22 is connected to a fifth wiring 5715.

Further, a fourth wiring 5504 illustrated in FIG. 22 is connected to asecond wiring 5712 in flip-flops of odd-numbered stages, and isconnected to a third wiring 5713 in flip-flops of even-numbered stages.A fifth wiring 5505 illustrated in FIG. 22 is connected to a fourthwiring 5714.

Note that the first wiring 5501 in FIG. 22, of the first stage flip-flop5701_1 is connected to a first wiring 5711. Moreover, the second wiring5502 in FIG. 22, of the n-th stage flip-flop 5701 _(—) n is connected toa sixth wiring 5716.

Note that the first wiring 5711, the second wiring 5712, the thirdwiring 5713, and the sixth wiring 5716 may be referred to as a firstsignal line, a second signal line, a third signal line, and a fourthsignal line, respectively. The fourth wiring 5714 and the fifth wiring5715 may be referred to as a first power supply line and a second powersupply line, respectively.

Next, FIG. 22 illustrates details of the flip-flop illustrated in FIG.21. A flip-flop illustrated in FIG. 22 includes a first thin filmtransistor 5571, a second thin film transistor 5572, a third thin filmtransistor 5573, a fourth thin film transistor 5574, a fifth thin filmtransistor 5575, a sixth thin film transistor 5576, a seventh thin filmtransistor 5577, and an eighth thin film transistor 5578. Each of thefirst thin film transistor 5571, the second thin film transistor 5572,the third thin film transistor 5573, the fourth thin film transistor5574, the fifth thin film transistor 5575, the sixth thin filmtransistor 5576, the seventh thin film transistor 5577, and the eighththin film transistor 5578 is an n-channel transistor and is turned onwhen the gate-source voltage (V_(gs)) exceeds the threshold voltage(V_(th)).

In FIG. 22, a gate electrode of the third thin film transistor 5573 iselectrically connected to the power supply line. Further, it can be saidthat a circuit in which the third thin film transistor 5573 is connectedto the fourth thin film transistor 5574 (a circuit surrounded by thedotted line in FIG. 22) corresponds to a configuration illustrated inFIG. 14A. Although the example in which all the thin film transistorsare enhancement type n-channel transistors is described here, there isno limitation to this example. For example, the driver circuit can bedriven even with the use of an n-channel depletion-type transistor asthe third thin film transistor 5573.

Next, connections of the flip-flop shown in FIG. 21 are described below.

A first electrode (one of a source electrode and a drain electrode) ofthe first thin film transistor 5571 is connected to the fourth wiring5504. A second electrode (the other of the source electrode and thedrain electrode) of the first thin film transistor 5571 is connected tothe third wiring 5503.

A first electrode of the second thin film transistor 5572 is connectedto the sixth wiring 5506. A second electrode of the second thin filmtransistor 5572 is connected to the third wiring 5503.

A first electrode of the third thin film transistor 5573 is connected tothe fifth wiring 5505, and a second electrode of the third thin filmtransistor 5573 is connected to a gate electrode of the second thin filmtransistor 5572. A gate electrode of the third thin film transistor 5573is connected to the fifth wiring 5505.

A first electrode of the fourth thin film transistor 5574 is connectedto the sixth wiring 5506. A second electrode of the fourth thin filmtransistor 5574 is connected to the gate electrode of the second thinfilm transistor 5572. A gate electrode of the fourth thin filmtransistor 5574 is connected to a gate electrode of the first thin filmtransistor 5571.

A first electrode of the fifth thin film transistor 5575 is connected tothe fifth wiring 5505. A second electrode of the fifth thin filmtransistor 5575 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the fifth thin film transistor5575 is connected to the first wiring 5501.

A first electrode of the sixth thin film transistor 5576 is connected tothe sixth wiring 5506. A second electrode of the sixth thin filmtransistor 5576 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the sixth thin film transistor5576 is connected to the gate electrode of the second thin filmtransistor 5572.

A first electrode of the seventh thin film transistor 5577 is connectedto the sixth wiring 5506. A second electrode of the seventh thin filmtransistor 5577 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the seventh thin filmtransistor 5577 is connected to the second wiring 5502. A firstelectrode of the eighth thin film transistor 5578 is connected to thesixth wiring 5506. A second electrode of the eighth thin film transistor5578 is connected to the gate electrode of the second thin filmtransistor 5572. A gate electrode of the eighth thin film transistor5578 is connected to the first wiring 5501.

Note that the points at which the gate electrode of the first thin filmtransistor 5571, the gate electrode of the fourth thin film transistor5574, the second electrode of the fifth thin film transistor 5575, thesecond electrode of the sixth thin film transistor 5576, and the secondelectrode of the seventh thin film transistor 5577 are connected areeach referred to as a node 5543. The points at which the gate electrodeof the second thin film transistor 5572, the second electrode of thethird thin film transistor 5573, the second electrode of the fourth thinfilm transistor 5574, the gate electrode of the sixth thin filmtransistor 5576, and the second electrode of the eighth thin filmtransistor 5578 are connected are each referred to as a node 5544.

Note that the first wiring 5501, the second wiring 5502, the thirdwiring 5503, and the fourth wiring 5504 may be referred to as a firstsignal line, a second signal line, a third signal line, and a fourthsignal line, respectively. The fifth wiring 5505 and the sixth wiring5506 may be referred to as a first power supply line and a second powersupply line, respectively.

In addition, when the channel width of the transistor in the scan linedriver circuit is increased or a plurality of scan line driver circuitsare provided, for example, higher frame frequency can be realized. Whena plurality of scan line driver circuits are provided, a scan linedriver circuit for driving scan lines of even-numbered rows is providedon one side and a scan line driver circuit for driving scan lines ofodd-numbered rows is provided on the opposite side; thus, increase inframe frequency can be realized. Furthermore, the use of the pluralityof scan line driver circuits for output of signals to the same scan linehave an advantage in increasing the size of a display device.

Further, when an active matrix light-emitting display device which is anexample of a semiconductor device is manufactured, a plurality of thinfilm transistors are arranged in at least one pixel, and thus aplurality of scan line driver circuits are preferably arranged. FIG. 17Bis a block diagram illustrating an example of an active matrixlight-emitting display device.

The light-emitting display device illustrated in FIG. 17B includes, overa substrate 5400, a pixel portion 5401 having a plurality of pixels eachprovided with a display element, a first scan line driver circuit 5402and a second scan line driver circuit 5404 that select a pixel, and asignal line driver circuit 5403 that controls input of a video signal tothe selected pixel.

When the video signal input to a pixel of the light-emitting displaydevice illustrated in FIG. 17B is a digital signal, a pixel is in alight-emitting state or in a non-light-emitting state by switching ofON/OFF of a transistor. Thus, grayscale can be displayed using an arearatio grayscale method or a time ratio grayscale method. An area ratiograyscale method refers to a driving method by which one pixel isdivided into a plurality of subpixels and the subpixels are drivenindependently based on video signals so that grayscale is displayed. Atime ratio grayscale method refers to a driving method by which a periodduring which a pixel is in a light-emitting state is controlled so thatgrayscale is displayed.

Since the response speed of light-emitting elements is higher than thatof liquid crystal elements or the like, the light-emitting elements aremore suitable for a time ratio grayscale method than liquid-crystaldisplay elements. Specifically, in the case of displaying with a timegray scale method, one frame period is divided into a plurality ofsubframe periods. Then, in accordance with video signals, thelight-emitting element in the pixel is set in a light-emitting state orin a non-light-emitting state during each subframe period. By dividingone frame into a plurality of subframes, the total length of time, inwhich pixels actually emit light in one frame period, can be controlledwith video signals so that gray scales are displayed.

In the example of the light-emitting display device illustrated in FIG.17B, in a case where two switching TFTs are arranged in one pixel, thefirst scan line driver circuit 5402 generates a signal which is input toa first scan line serving as a gate wiring of one of the switching TFTs,and the second scan line driver circuit 5404 generates a signal which isinput to a second scan line serving as a gate wiring of the other of theswitching TFTs; however, one scan line driver circuit may generate boththe signal which is input to the first scan line and the signal which isinput to the second scan line. In addition, for example, there is apossibility that a plurality of scan lines used for controlling theoperation of the switching elements be provided in each pixel dependingon the number of switching TFTs included in one pixel. In that case, onescan line driver circuit may generate all signals that are input to theplurality of scan lines, or a plurality of scan line driver circuits maygenerate signals that are input to the plurality of scan lines.

Also in the light-emitting display device, a part of a driver circuitthat can be formed with n-channel TFTs can be formed over the samesubstrate as the thin film transistors of the pixel portion.

Moreover, the above-described driver circuit can be used for electronicpaper that drives electronic ink using an element electrically connectedto a switching element, without being limited to applications to aliquid crystal display device or a light-emitting display device. Theelectronic paper is also referred to as an electrophoretic displaydevice (electrophoretic display) and has advantages in that it has thesame level of readability as plain paper, it has lower power consumptionthan other display devices, and it can be made thin and lightweight.

Electrophoretic displays can have various modes. Electrophoreticdisplays contain a plurality of microcapsules dispersed in a solvent ora solute. Each microcapsule contains first particles which arepositively charged and second particles which are negatively charged. Byapplying an electric field to the microcapsules, the particles in themicrocapsules are moved in opposite directions to each other and onlythe color of the particles concentrated on one side is exhibited. Notethat the first particles and the second particles each contain pigmentand do not move without an electric field. Moreover, the colors of thefirst particles and the second particles are different from each other(the colors include colorless or achroma).

Thus, the electrophoretic display utilizes a so-called dielectrophoreticeffect, in which a substance with high dielectric constant moves to aregion with high electric field. The electrophoretic display does notneed a polarizing plate and an opposite substrate, which are necessaryfor a liquid crystal display device, so that the thickness and weightthereof are about half.

A solution in which the aforementioned microcapsules are dispersedthroughout a solvent is referred to as electronic ink. This electronicink can be printed on a surface of glass, plastic, cloth, paper, or thelike. Furthermore, by use of a color filter or particles that have apigment, color display is possible, as well.

In addition, a plurality of the above microcapsules are arranged asappropriate over an active matrix substrate so as to be interposedbetween two electrodes, whereby an active matrix display device can becompleted, and display can be performed by application of an electricfield to the microcapsules. For example, the active matrix substrateincluding the thin film transistor (in which an oxide semiconductorlayer including SiO_(x) is used for a channel formation region and anoxide semiconductor including nitrogen is used for source and drainregions) described in Embodiment 2 can be used.

Note that the first particles and the second particles in themicrocapsules may each be formed of a single material selected from aconductive material, an insulating material, a semiconductor material, amagnetic material, a liquid crystal material, a ferroelectric material,an electroluminescent material, an electrochromic material, or amagnetophoretic material or formed of a composite material of any ofthese.

Through the above process, a highly reliable display device as asemiconductor device can be manufactured.

This embodiment can be combined with any of the other embodiments asappropriate.

(Embodiment 9)

In this embodiment, an example of a light-emitting display device isdescribed as a semiconductor device. As a display element included in adisplay device, a light-emitting element utilizing electroluminescenceis described here. Light-emitting elements utilizing electroluminescenceare classified according to whether a light-emitting material is anorganic compound or an inorganic compound. In general, the former isreferred to as an organic EL element, and the latter as an inorganic ELelement.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. The carriers (electrons and holes) are recombined,and thus, the light-emitting organic compound is excited. Thelight-emitting organic compound returns to a ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that description ismade here using an organic EL element as a light-emitting element.

FIG. 23 illustrates an example of a pixel structure to which digitaltime grayscale driving can be applied, as an example of a semiconductordevice.

A structure and an operation of a pixel to which digital time ratio grayscale driving can be applied are described. Here, one pixel includes twon-channel transistors in each of which an oxide semiconductor layerincluding SiO_(x) (typically, an In—Ga—Zn—O-based non-single-crystalfilm) is used for a channel formation region and an In—Ga—Zn—O-basedoxide semiconductor including nitrogen is used for source and drainregions.

A pixel 6400 includes a switching transistor 6401, a driver transistor6402, a light-emitting element 6404, and a capacitor 6403. A gate of theswitching transistor 6401 is connected to a scan line 6406, a firstelectrode (one of a source electrode and a drain electrode) of theswitching transistor 6401 is connected to a signal line 6405, and asecond electrode (the other of the source electrode and the drainelectrode) of the switching transistor 6401 is connected to a gate ofthe driver transistor 6402. The gate of the driver transistor 6402 isconnected to a power supply line 6407 via the capacitor 6403, a firstelectrode of the driver transistor 6402 is connected to the power supplyline 6407, and a second electrode of the driver transistor 6402 isconnected to a first electrode (pixel electrode) of the light-emittingelement 6404. A second electrode of the light-emitting element 6404corresponds to a common electrode 6408. The common electrode 6408 iselectrically connected to a common potential line provided over the samesubstrate, and the connection portion thereof is a common connectionportion.

The second electrode (the common electrode 6408) of the light-emittingelement 6404 is set to a low power supply potential. Note that the lowpower supply potential is a potential smaller than a high power supplypotential when the high power supply potential set to the power supplyline 6407 is a reference. As the low power supply potential, GND, 0 V,or the like may be adopted, for example. A potential difference betweenthe high power supply potential and the low power supply potential isapplied to the light-emitting element 6404 and current is supplied tothe light-emitting element 6404, so that the light-emitting element 6404emits light. Here, in order to make the light-emitting element 6404 emitlight, each potential is set so that the potential difference betweenthe high power supply potential and the low power supply potential is aforward threshold voltage or higher.

Note that gate capacitance of the driver transistor 6402 may be used asa substitute for the capacitor 6403, so that the capacitor 6403 can beomitted. The gate capacitance of the driver transistor 6402 may beformed between the channel region and the gate electrode.

In the case of a voltage-input voltage driving method, a video signal isinput to the gate of the driver transistor 6402 so that the drivertransistor 6402 is in either of two states of being sufficiently turnedon and turned off. That is, the driver transistor 6402 operates in alinear region. Since the driver transistor 6402 operates in a linearregion, a voltage higher than the voltage of the power supply line 6407is applied to the gate of the driver transistor 6402. Note that avoltage higher than or equal to (voltage of the power supply line+V_(th)of the driver transistor 6402) is applied to the signal line 6405.

In the case of performing analog grayscale driving instead of digitaltime grayscale driving, the same pixel structure as that in FIG. 23 canbe used by changing signal input.

In the case of performing analog grayscale driving, a voltage higherthan or equal to the sum of the forward voltage of the light-emittingelement 6404 and the V_(th) of the driver transistor 6402 is applied tothe gate of the driver transistor 6402. The forward voltage of thelight-emitting element 6404 indicates a voltage at which a desiredluminance is obtained, and includes at least a forward thresholdvoltage. The video signal by which the driver transistor 6402 operatesin a saturation region is input, so that current can be supplied to thelight-emitting element 6404. In order to make the driver transistor 6402operate in a saturation region, the potential of the power supply line6407 is set higher than the gate potential of the driver transistor6402. When an analog video signal is used, it is possible to feedcurrent to the light-emitting element 6404 in accordance with the videosignal and perform analog grayscale driving.

Note that the pixel structure illustrated in FIG. 23 is not limitedthereto. For example, a switch, a resistor, a capacitor, a transistor, alogic circuit, or the like may be added to the pixel illustrated in FIG.23.

Next, structures of the light-emitting element are described withreference to FIGS. 24A to 24C. A cross-sectional structure of a pixel isdescribed by taking an n-channel driving TFT as an example. Driving TFTs7001, 7011, and 7021 used for semiconductor devices illustrated in FIGS.24A to 24C can be formed in a manner similar to formation of the thinfilm transistor 170 described in Embodiment 2 and are thin filmtransistors in each of which an oxide semiconductor layer includingSiO_(x) for a channel formation region and an oxide semiconductorincluding nitrogen is used for source and drain regions.

In order to extract light emission of a light-emitting element, at leastone of an anode and a cathode may be transparent. A thin film transistorand a light-emitting element are formed over a substrate. Alight-emitting element can have a top emission structure, in which lightemission is extracted through the surface opposite to the substrate; abottom emission structure, in which light emission is extracted throughthe surface on the substrate side; or a dual emission structure, inwhich light emission is extracted through the surface opposite to thesubstrate and the surface on the substrate side. The pixel structure canbe applied to a light-emitting element having any of these emissionstructures.

A light-emitting element having a top emission structure is describedwith reference to FIG. 24A.

FIG. 24A is a cross-sectional view of a pixel in the case where thedriving TFT 7001 is an n-channel TFT and light is emitted from alight-emitting element 7002 to an anode 7005 side. In the TFT 7001, anIn—Sn—O-based oxide semiconductor including silicon oxide is used for asemiconductor layer and an In—Zn—O-based oxide semiconductor includingnitrogen is used for source and drain regions. In FIG. 24A, a cathode7003 of the light-emitting element 7002 is electrically connected to thedriving TFT 7001, and a light-emitting layer 7004 and the anode 7005 arestacked in this order over the cathode 7003. The cathode 7003 can beformed using various conductive materials as long as they have a lowwork function and reflect light. For example, Ca, Al, MgAg, AlLi, or thelike is preferably used. The light-emitting layer 7004 may be formedusing either a single layer or a stacked layer of a plurality of layers.If the light-emitting layer 7004 is formed using a plurality of layers,the light-emitting layer 7004 is formed by stacking anelectron-injecting layer, an electron-transporting layer, alight-emitting layer, a hole-transporting layer, and a hole-injectinglayer in this order over the cathode 7003. It is not necessary to formall of these layers. The anode 7005 is formed using a light-transmittingconductive film such as a film of indium oxide including tungsten oxide,indium zinc oxide including tungsten oxide, indium oxide includingtitanium oxide, indium tin oxide including titanium oxide, indium tinoxide (hereinafter, referred to as ITO), indium zinc oxide, or indiumtin oxide to which silicon oxide is added.

A region where the light-emitting layer 7004 is sandwiched between thecathode 7003 and the anode 7005 corresponds to the light-emittingelement 7002. In the case of the pixel illustrated in FIG. 24A, light isemitted from the light-emitting element 7002 to the anode 7005 side asindicated by an arrow.

Next, a light-emitting element having a bottom emission structure isdescribed with reference to FIG. 24B. FIG. 24B is a cross-sectional viewof a pixel in a case where the driving TFT 7011 is an n-channel TFT, andlight generated in a light-emitting element 7012 is emitted to passthrough a cathode 7013. In the TFT 7011, an In—Zn—O-based oxidesemiconductor including silicon oxide is used as a semiconductor layerand an In—Zn—O-based oxide semiconductor including nitrogen is used forsource and drain regions. In FIG. 24B, the cathode 7013 of thelight-emitting element 7012 is formed over a light-transmittingconductive film 7017 that is electrically connected to the driving TFT7011, and a light-emitting layer 7014 and an anode 7015 are stacked inthis order over the cathode 7013. A blocking film 7016 for reflecting orblocking light may be formed so as to cover the anode 7015 when theanode 7015 has a light-transmitting property. For the cathode 7013, avariety of materials can be used as in the case of FIG. 24A as long asthey are conductive materials having a low work function. The cathode7013 has a thickness that can transmit light (preferably, about 5 nm to30 nm). For example, an aluminum film with a thickness of 20 nm can beused as the cathode 7013. Similar to the case of FIG. 24A, thelight-emitting layer 7014 may be formed using either a single layer or aplurality of layers stacked. The anode 7015 need not transmit light, butcan be formed using a light-transmitting conductive material as in thecase of FIG. 24A. For the blocking film 7016, a metal or the like thatreflects light can be used; however, it is not limited to a metal film.For example, a resin or the like to which black pigments are added canbe used.

A region where the light-emitting layer 7014 is sandwiched between thecathode 7013 and the anode 7015 corresponds to the light-emittingelement 7012. In the case of the pixel illustrated in FIG. 24B, light isemitted from the light-emitting element 7012 to the cathode 7013 side asindicated by an arrow.

Next, a light-emitting element having a dual emission structure isdescribed with reference to FIG. 24C. In FIG. 24C, a cathode 7023 of alight-emitting element 7022 is formed over a light-transmittingconductive film 7027 which is electrically connected to the driving TFT7021, and a light-emitting layer 7024 and an anode 7025 are stacked inthis order over the cathode 7023. In the TFT 7021, an In—Zn—O-basedoxide semiconductor including silicon oxide is used as a semiconductorlayer and a Zn—O-based oxide semiconductor including nitrogen is usedfor source and drain regions. As in the case of FIG. 24A, the cathode7023 can be formed using a variety of conductive materials as long asthey have a low work function. The cathode 7023 has a thickness that cantransmit light. For example, an Al film having a thickness of 20 nm canbe used as the cathode 7023. As in FIG. 24A, the light-emitting layer7024 may be formed using either a single layer or a plurality of layersstacked. The anode 7025 can be formed using a light-transmittingconductive material as in the case of FIG. 24A.

A region where the cathode 7023, the light-emitting layer 7024, and theanode 7025 overlap with each other corresponds to the light-emittingelement 7022. In the case of the pixel illustrated in FIG. 24C, light isemitted from the light-emitting element 7022 to both the anode 7025 sideand the cathode 7023 side as indicated by arrows.

Although an organic EL element is described as a light-emitting elementhere, it is also possible to provide an inorganic EL element as alight-emitting element.

This embodiment describes an example in which a thin film transistor forcontrolling the drive of a light-emitting element (the driving TFT) iselectrically connected to the light-emitting element. However, a currentcontrol TFT may be formed between the driving TFT and the light-emittingelement to be connected to them.

Next, the appearance and cross section of a light-emitting display panel(also referred to as a light-emitting panel) which corresponds to onemode of a semiconductor device are described with reference to FIGS. 25Aand 25B. FIG. 25A is a top view of a panel in which a thin filmtransistor and a light-emitting element are sealed between a firstsubstrate and a second substrate with a sealant. FIG. 25B is across-sectional view taken along the line H-I of FIG. 25A.

A sealant 4505 is provided to surround a pixel portion 4502, signal linedriver circuits 4503 a and 4503 b, and scan line driver circuits 4504 aand 4504 b, which are provided over a first substrate 4501. In addition,a second substrate 4506 is provided over the pixel portion 4502, thesignal line driver circuits 4503 a and 4503 b, and the scan line drivercircuits 4504 a and 4504 b. Accordingly, the pixel portion 4502, thesignal line driver circuits 4503 a and 4503 b, and the scan line drivercircuits 4504 a and 4504 b are sealed together with a filler 4507, bythe first substrate 4501, the sealant 4505, and the second substrate4506. It is preferable that a display device be thus packaged (sealed)with a protective film (such as a bonding film or an ultraviolet curableresin film) or a cover material with high air-tightness and littledegasification so that the display device is not exposed to the outsideair.

The pixel portion 4502, the signal line driver circuits 4503 a and 4503b, and the scan line driver circuits 4504 a and 4504 b formed over thefirst substrate 4501 each include a plurality of thin film transistors,and a thin film transistor 4510 included in the pixel portion 4502 and athin film transistor 4509 included in the signal line driver circuit4503 a are illustrated as an example in FIG. 25B.

In each of the thin film transistors 4509 and 4510, an In—Zn—O-basedoxide semiconductor including silicon oxide is used, and anIn—Zn—O-based oxide semiconductor including nitrogen is used for sourceand drain regions. In this embodiment, the thin film transistors 4509and 4510 are n-channel thin film transistors.

Moreover, reference numeral 4511 denotes a light-emitting element. Afirst electrode layer 4517 that is a pixel electrode included in thelight-emitting element 4511 is electrically connected to a sourceelectrode layer or a drain electrode layer of the thin film transistor4510. Note that a structure of the light-emitting element 4511 is astacked-layer structure of the first electrode layer 4517, anelectroluminescent layer 4512, and a second electrode layer 4513, butthe present invention is not limited to that described in thisembodiment. The structure of the light-emitting element 4511 can bechanged as appropriate depending on the direction in which light isextracted from the light-emitting element 4511, or the like.

A partition wall 4520 is formed using an organic resin film, aninorganic insulating film, or organic polysiloxane. It is particularlypreferable that the partition wall 4520 be formed using a photosensitivematerial and an opening be formed over the first electrode layer 4517 sothat a sidewall of the opening is formed as an inclined surface withcontinuous curvature.

The electroluminescent layer 4512 may be formed with a single layer or aplurality of layers stacked.

A protective film may be formed over the second electrode layer 4513 andthe partition wall 4520 in order to prevent entry of oxygen, hydrogen,moisture, carbon dioxide, or the like into the light-emitting element4511. As the protective film, a silicon nitride film, a silicon nitrideoxide film, a DLC film, or the like can be formed.

In addition, a variety of signals and potentials are supplied to thesignal line driver circuits 4503 a and 4503 b, the scan line drivercircuits 4504 a and 4504 b, or the pixel portion 4502 from FPCs 4518 aand 4518 b.

In this embodiment, a connection terminal electrode 4515 is formed fromthe same conductive film as the first electrode layer 4517 included inthe light-emitting element 4511, and a terminal electrode 4516 is formedfrom the same conductive film as the source and drain electrode layersincluded in the thin film transistors 4509 and 4510.

The connection terminal electrode 4515 is electrically connected to aterminal included in the FPC 4518 a through an anisotropic conductivefilm 4519.

The second substrate 4506 located in the direction in which light isextracted from the light-emitting element 4511 needs to have alight-transmitting property. In that case, a light-transmitting materialsuch as a glass plate, a plastic plate, a polyester film, or an acrylicfilm is used.

As the filler 4507, an ultraviolet curable resin or a thermosettingresin can be used, in addition to an inert gas such as nitrogen orargon. For example, PVC (polyvinyl chloride), acrylic, polyimide, anepoxy resin, a silicone resin, PVB (polyvinyl butyral), or EVA (ethylenevinyl acetate) can be used. In this embodiment, nitrogen is used for thefiller 4507.

In addition, if needed, an optical film, such as a polarizing plate, acircularly polarizing plate (including an elliptically polarizingplate), a retardation plate (a quarter-wave plate or a half-wave plate),or a color filter may be provided as appropriate on a light-emittingsurface of the light-emitting element. Further, the polarizing plate orthe circularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by projections and depressions on the surface so as to reducethe glare can be performed.

The signal line driver circuits 4503 a and 4503 b and the scan linedriver circuits 4504 a and 4504 b may be provided as driver circuitsformed using a single crystal semiconductor film or polycrystallinesemiconductor film over a substrate separately prepared. In addition,only the signal line driver circuits or part thereof, or only the scanline driver circuits or part thereof may be separately formed andmounted. This embodiment is not limited to the structure illustrated inFIGS. 25A and 25B.

Through this process, a highly reliable light-emitting display device(display panel) as a semiconductor device can be manufactured.

This embodiment can be combined with any of the other embodiments asappropriate.

(Embodiment 10)

Thin film transistors in each of which an oxide semiconductor layerincluding SiO_(x) is used for a channel formation region and an oxidesemiconductor including nitrogen is used for source and drain regionsare formed, and a liquid crystal display device having a displayfunction, in which the thin film transistors are included in a drivercircuit and a pixel portion, can be manufactured. Further, part or wholeof a driver circuit can be formed over the same substrate as a pixelportion, using a thin film transistor, whereby a system-on-panel can beobtained.

The liquid crystal display device includes a liquid crystal element(also referred to as a liquid crystal display element) as a displayelement.

Further, a liquid crystal display device includes a panel in which aliquid crystal display element is sealed, and a module in which an IC orthe like including a controller is mounted to the panel. An embodimentof the present invention also relates to an element substrate, whichcorresponds to one mode before the display element is completed in amanufacturing process of the liquid crystal display device, and theelement substrate is provided with means for supplying current to thedisplay element in each of a plurality of pixels. Specifically, theelement substrate may be in a state after only a pixel electrode of thedisplay element is formed, a state after a conductive film to be a pixelelectrode is formed and before the conductive film is etched to form thepixel electrode, or any of other states.

Note that a liquid crystal display device in this specification means animage display device, a display device, or a light source (including alighting device). Furthermore, the liquid crystal display device alsoincludes the following modules in its category: a module to which aconnector such as a flexible printed circuit (FPC), a tape automatedbonding (TAB) tape, or a tape carrier package (TCP) is attached; amodule having a TAB tape or a TCP at the tip of which a printed wiringboard is provided; and a module in which an integrated circuit (IC) isdirectly mounted on a display element by chip on glass (COG).

The appearance and a cross section of a liquid crystal display panel,which is one embodiment of a liquid crystal display device, is describedwith reference to FIGS. 26A1 and 26A2, and 26B. FIGS. 26A1 and A2 aretop views of a panel in which a liquid crystal element 4013 is sealedbetween a first substrate 4001 and a second substrate 4006 with asealant 4005. FIG. 26B is a cross-sectional view along line M-N of FIGS.26A1 and A2.

The sealant 4005 is provided so as to surround a pixel portion 4002 anda scan line driver circuit 4004 that are provided over the firstsubstrate 4001. The second substrate 4006 is provided over the pixelportion 4002 and the scan line driver circuit 4004. Therefore, the pixelportion 4002 and the scan line driver circuit 4004 are sealed togetherwith a liquid crystal layer 4008, by the first substrate 4001, thesealant 4005, and the second substrate 4006. There is no particularlimitation on the liquid crystal layer 4008 in this embodiment, but aliquid crystal material exhibiting a blue phase is used. The liquidcrystal material exhibiting a blue phase has a short response time of 1msec or less from in the non-voltage-applied state to in thevoltage-applied state and enables high-speed response. The liquidcrystal material exhibiting a blue phase includes a liquid crystal and achiral agent. The chiral agent is employed to align the liquid crystalin a helical structure and to make the liquid crystal exhibit a bluephase. For example, a liquid crystal material into which a chiral agentis mixed at 5 wt % or more may be used for the liquid crystal layer. Asthe liquid crystal, a thermotropic liquid crystal, a low-molecularliquid crystal, a high-molecular liquid crystal, a ferroelectric liquidcrystal, an anti-ferroelectric liquid crystal, or the like is used.

In FIG. 26A1, a signal line driver circuit 4003 that is formed using asingle crystal semiconductor film or a polycrystalline semiconductorfilm over a substrate separately prepared is mounted in a region that isdifferent from the region surrounded by the sealant 4005 over the firstsubstrate 4001. In contrast, FIG. 26A2 illustrates an example in whichpart of a signal line driver circuit 4003 is formed over the firstsubstrate 4001. A signal line driver circuit 4003 b is formed over thefirst substrate 4001 and a signal line driver circuit 4003 a which isformed using a single crystal semiconductor film or a polycrystallinesemiconductor film is mounted on the substrate separately prepared.

Note that there is no particular limitation on the connection method ofa driver circuit which is separately formed, and a COG method, a wirebonding method, a TAB method, or the like can be used. FIG. 26A1illustrates an example in which the signal line driver circuit 4003 ismounted by a COG method and FIG. 26A2 illustrates an example in whichthe signal line driver circuit 4003 is mounted by a TAB method.

Each of the pixel portion 4002 and the scan line driver circuit 4004which are provided over the first substrate 4001 includes a plurality ofthin film transistors. FIG. 26B illustrates a thin film transistor 4010included in the pixel portion 4002 and a thin film transistor 4011included in the scan line driver circuit 4004. Insulating layers 4020and 4021 are provided over the thin film transistors 4010 and 4011. Thethin film transistors 4010 and 4011 can be each a thin film transistorin which an oxide semiconductor layer including SiO_(x) is used for achannel formation region and an oxide semiconductor including nitrogenis used for source and drain regions. In this embodiment, the thin filmtransistors 4010 and 4011 are n-channel thin film transistors.

A pixel electrode layer 4030 and a common electrode layer 4031 areprovided over the first substrate 4001, and the pixel electrode layer4030 is electrically connected to the thin film transistor 4010. Theliquid crystal element 4013 includes the pixel electrode layer 4030, thecommon electrode layer 4031, and the liquid crystal layer 4008. In thisembodiment, a method is used in which a gray scale is controlled bygenerating an electric field approximately parallel (i.e., in a lateraldirection) to a substrate to move liquid crystal molecules in a planeparallel to the substrate. In such a method, an electrode structure usedin an in plane switching (IPS) mode or an electrode structure used in afringe field switching (FFS) mode can be used. Note that a polarizingplate 4032 and a polarizing plate 4033 are provided on the outer sidesof the first substrate 4001 and the second substrate 4006, respectively.

As the first substrate 4001 and the second substrate 4006, glass,plastic, or the like having a light-transmitting property can be used.As plastic, a fiberglass-reinforced plastics (FRP) plate, a polyvinylfluoride (PVF) film, a polyester film, or an acrylic resin film can beused. Further, sheet in which aluminum foil is sandwiched by PVF filmsor polyester films can also be used.

A columnar spacer denoted by reference numeral 4035 is obtained byselective etching of an insulating film and is provided in order tocontrol the thickness (a cell gap) of the liquid crystal layer 4008.Note that a spherical spacer may be used.

FIGS. 26A1 and 26A2, and 26B illustrate examples of liquid crystaldisplay devices in which a polarizing plate is provided on the outerside (the view side) of a substrate; however, the polarizing plate maybe provided on the inner side of the substrate. The position of thepolarizing plate may be determined as appropriate depending on thematerial of the polarizing plate and conditions of the manufacturingprocess. Furthermore, a light-blocking layer serving as a black matrixmay be provided.

The insulating layer as an interlayer film 4021 is a light-transmittingresin layer, but it partly includes a light-blocking layer 4012. Thelight-blocking layer 4012 covers the thin film transistors 4010 and4011. In FIGS. 26A1 and A2, and 26B, a light-blocking layer 4034 isprovided on the second substrate 4006 side so as to cover the thin filmtransistors 4010 and 4011. By the light-blocking layer 4012 and thelight-blocking layer 4034, improvement in contrast and stabilization ofthe thin film transistors can be achieved.

By providing the light-blocking layer 4034, the intensity of incidentlight on the semiconductor layer of the thin film transistor can beattenuated. Accordingly, electric characteristics of the thin filmtransistor can be prevented from being varied due to photosensitivity ofthe oxide semiconductor and can be stabilized.

The thin film transistors may be covered with the insulating layer 4020which serves as a protective film of the thin film transistors; however,the structure of the thin film transistor is not particularly limitedthreto.

Note that the protective film is provided to prevent entry of impuritiesfloating in air, such as an organic substance, a metal substance, ormoisture, and is preferably a dense film. The protective film may beformed by a sputtering method to be a single-layer film or a stackedlayer using any of a silicon oxide film, a silicon nitride film, asilicon oxynitride film, a silicon nitride oxide film, an aluminum oxidefilm, an aluminum nitride film, an aluminum oxynitride film, and analuminum nitride oxide film.

Further, in the case of further forming a light-transmitting insulatinglayer as a planarizing insulating film, the light-transmittinginsulating layer can be formed using an organic material having heatresistance, such as polyimide, acrylic, benzocyclobutene, polyamide, orepoxy. Other than such organic materials, it is also possible to use alow-dielectric constant material (a low-k material), a siloxane-basedresin, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), orthe like. The insulating layer may be formed by stacking a plurality ofinsulating films formed of these materials.

There is no particular limitation on the formation method of theinsulating layer having a stacked structure, and the following methodcan be employed in accordance with the material: sputtering, an SOGmethod, spin coating, dip coating, spray coating, droplet discharging(e.g., ink jetting, screen printing, or offset printing), doctor knife,roll coating, curtain coating, knife coating, or the like. In the casewhere the insulating layer is formed using a material solution, thesemiconductor layer may be annealed (at 200° C. to 400° C.) at the sametime of a baking step. The baking step of the insulating layer iscombined with the annealing step of the semiconductor layer, whereby aliquid crystal display device can be manufactured efficiently.

The pixel electrode layer 4030 and the common electrode layer 4031 canbe formed using a light-transmitting conductive material such as indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium tin oxide (hereinafter referred to asITO), indium zinc oxide, or indium tin oxide to which silicon oxide isadded.

A conductive composition containing a conductive high molecule (alsoreferred to as a conductive polymer) can be used for the pixel electrodelayer 4030 and the common electrode layer 4031.

In addition, a variety of signals and potentials are supplied to thesignal line driver circuit 4003 which is formed separately, and the scanline driver circuit 4004 or the pixel portion 4002 from an FPC 4018.

Further, since the thin film transistor is easily broken by staticelectricity or the like, a protection circuit for protecting the drivercircuits is preferably provided over the same substrate for a gate lineor a source line. The protection circuit is preferably formed using anonlinear element in which an oxide semiconductor is used.

In FIGS. 26A1 and A2, and 26B, a connecting terminal electrode 4015 isformed using the same conductive film as the pixel electrode layer 4030,and a terminal electrode 4016 is formed using the same conductive filmas source and drain electrode layers of the thin film transistors 4010and 4011.

The connection terminal electrode 4015 is electrically connected to aterminal included in the FPC 4018 through an anisotropic conductive film4019.

Although FIGS. 26A1 and A2, and 26B illustrate an example in which thesignal line driver circuit 4003 is formed separately and mounted on thefirst substrate 4001, the present invention is not limited to thisstructure. The scan line driver circuit may be formed separately andthen mounted, or only part of the signal line driver circuit or part ofthe scan line driver circuit may be formed separately and then mounted.

FIG. 27 illustrates an example of a cross-sectional structure of aliquid crystal display device in which an element layer including TFTsand the like and a liquid crystal layer 2604 are provided between anelement substrate 2600 and a counter substrate 2601 which are bondedwith a sealant 2602.

In the case where color display is performed, light-emitting diodeswhich emit lights of plural colors are arranged in a backlight portion.In the case of an RGB mode, a red light-emitting diode 2910R, a greenlight-emitting diode 2910G, and a blue light-emitting diode 2910B aredisposed in each of the regions into which a display area of the liquidcrystal display device is divided.

A polarizing plate 2606 is provided on the outer side of the countersubstrate 2601, and a polarizing plate 2607 and an optical sheet 2613are provided on the outer side of the element substrate 2600. A lightsource is formed using the red light-emitting diode 2910R, the greenlight-emitting diode 2910G, the blue light-emitting diode 2910B, and areflective plate 2611. An LED control circuit 2912 provided for acircuit substrate 2612 is connected to a wiring circuit portion 2608 ofthe element substrate 2600 through a flexible wiring board 2609 andfurther includes an external circuit such as a control circuit or apower source circuit.

In this embodiment, an example in which LEDs are individually made toemit light by this LED control circuit 2912, so that a field-sequentialliquid crystal display device is formed; however, the present inventionis not limited thereto. A cold cathode tube or a white LED may be usedas a light source of backlight, and a color filter may be provided.

Further, in this embodiment, an example of an electrode structure usedin the IPS mode is described; however, there is no particularlylimitation on an electrode structure mode. The following mode can beused: a TN (twisted nematic) mode, an MVA (multi-domain verticalalignment) mode, a PVA (patterned vertical alignment) mode, an ASM(axially symmetric aligned micro-cell) mode, an OCB (optical compensatedbirefringence) mode, an FLC (ferroelectric liquid crystal) mode, an AFLC(antiferroelectric liquid crystal) mode, or the like.

This embodiment can be combined with any of the other embodiments asappropriate.

(Embodiment 11)

In this embodiment, an example of electronic paper is described as asemiconductor device.

FIG. 28A is a cross-sectional view of an active-matrix electronic paper.A thin film transistor 581 provided in a display portion of asemiconductor device can be manufactured in a manner similar to the thinfilm transistor described in Embodiment 2, in which an oxidesemiconductor layer including SiO_(x) is used for a channel formationregion and an oxide semiconductor including nitrogen is used for sourceand drain regions.

The electronic paper in FIG. 28A is an example of a display device usinga twisting ball display method. A twisting ball display method employs amethod in which display is performed by arranging spherical particleseach of which is colored separately in black and white between the firstelectrode layer and the second electrode layer which are electrodelayers used for display elements, and generating a potential differencebetween the first electrode layer and the second electrode layer so asto control the directions of the spherical particles.

The thin film transistor 581 which is sealed between a substrate 580 anda substrate 596 is a thin film transistor with a bottom-gate structure,and a source or drain electrode layer thereof is in contact with a firstelectrode layer 587 through an opening formed in insulating layers 583,584, and 585, whereby the thin film transistor 581 is electricallyconnected to the first electrode layer 587. Between the first electrodelayer 587 and a second electrode layer 588, spherical particles 589 areprovided. Each spherical particle 589 includes a black region 590 a anda white region 590 b, and a cavity 594 filled with liquid around theblack region 590 a and the white region 590 b. The circumference of thespherical particle 589 is filled with filler 595 such as a resin (seeFIG. 28A).

In this embodiment, the first electrode layer 587 corresponds to a pixelelectrode, and the second electrode layer 588 corresponds to a commonelectrode. The second electrode layer 588 is electrically connected to acommon potential line provided over the same substrate as the thin filmtransistor 581. The second electrode layer 588 and the common potentialline are electrically connected through conductive particles arrangedbetween a pair of substrates, in the common connection portion.

Instead of the twisting ball, an electrophoretic element can also beused. A microcapsule having a diameter of approximately 10 μm to 20 μm,in which a transparent liquid and positively charged whitemicroparticles and negatively charged black microparticles areencapsulated, is used. In the microcapsule that is provided between thefirst electrode layer and the second electrode layer, when an electricfield is applied by the first electrode layer and the second electrodelayer, the white microparticles and the black microparticles migrate toopposite sides to each other, so that white or black can be displayed. Adisplay element using this principle is an electrophoretic displayelement and is called electronic paper. The electrophoretic displayelement has higher reflectivity than a liquid crystal display element;thus, an auxiliary light is unnecessary, less power is consumed, and adisplay portion can be recognized even in a dusky place. In addition,even when power is not supplied to the display portion, an image whichhas been displayed once can be maintained. Accordingly, a displayedimage can be stored even if a semiconductor device having a displayfunction (which may simply be referred to as a display device or asemiconductor device provided with a display device) is distanced froman electric wave source.

With use of the thin film transistor formed by the steps described inEmbodiment 2, in which an oxide semiconductor layer including SiO_(x) isused for a channel formation region and an oxide semiconductor includingnitrogen is used for source and drain regions, electronic paper can bemanufactured with reduced manufacturing cost, as a semiconductor device.Electronic paper can be used for electronic appliances of a variety offields as long as they can display data. For example, electronic papercan be applied to an e-book reader (electronic book), a poster, anadvertisement in a vehicle such as a train, or displays of various cardssuch as a credit card. An example of the electronic apparatus isillustrated in FIG. 28B.

FIG. 28B illustrates an example of an e-book 2700. For example, thee-book reader 2700 includes two housings, a housing 2701 and a housing2703. The housing 2701 and the housing 2703 are combined with a hinge2711 so that the e-book reader 2700 can be opened and closed with thehinge 2711 as an axis. With such a structure, the e-book reader 2700 canoperate like a paper book.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, a display portion onthe right side (the display portion 2705 in FIG. 28B) can display textwhereas a display portion on the left side (the display portion 2707 inFIG. 28B) can display graphics.

In the example illustrated in FIG. 28B, the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power switch 2721, an operation key 2723, a speaker2725, and the like. With the operation key 2723, pages can be turned.Note that a keyboard, a pointing device, and the like may be provided onthe same surface as the display portion of the housing. Furthermore, anexternal connection terminal (an earphone terminal, a USB terminal, aterminal that can be connected to various cables such as an AC adapterand a USB cable, or the like), a recording medium insertion portion, andthe like may be provided on the back surface or the side surface of thehousing. Moreover, the e-book reader 2700 may have a function of anelectronic dictionary.

The e-book reader 2700 may have a configuration capable of wirelesslytransmitting and receiving data. Through wireless communication, desiredbook data or the like can be purchased and downloaded from an electronicbook server.

This embodiment can be combined with any of the other embodiments asappropriate.

(Embodiment 12)

A semiconductor device including a thin film transistor in which anoxide semiconductor layer including SiO_(x) is used for a channelformation region and an oxide semiconductor including nitrogen is usedfor source and drain regions can be applied to a variety of electronicappliances (including amusement machines). Examples of electronicappliances include television sets (also referred to as televisions ortelevision receivers), monitor of computers or the like, cameras such asdigital cameras or digital video cameras, digital photo frames, cellularphones (also referred to as mobile phones or mobile phone sets),portable game machines, portable information terminals, audioreproducing devices, large-sized game machines such as pachinkomachines, and the like.

FIG. 29A illustrates an example of a television set 9601. In thetelevision set 9601, a display portion 9603 is incorporated in ahousing. The display portion 9603 can display images. In addition,illustrated in FIG. 29A is the structure in which the rear side of thehousing is supported by fixing to a wall 9600.

The television set 9601 can be operated with an operation switch of thehousing or a separate remote controller 9610. Channels and volume can becontrolled with an operation key 9609 of the remote controller 9610 sothat an image displayed on the display portion 9603 can be controlled.Furthermore, the remote controller 9610 may be provided with a displayportion 9607 for displaying data output from the remote controller 9610.

Note that the television set 9601 is provided with a receiver, a modem,and the like. With the use of the receiver, general televisionbroadcasting can be received. Moreover, when the display device isconnected to a communication network with or without wires via themodem, one-way (from a sender to a receiver) or two-way (between asender and a receiver or between receivers) information communicationcan be performed.

FIG. 29B is a portable game machine and includes two housings, a housing9881 and a housing 9891, which are connected with a joint portion 9893so that the portable game machine can be opened or folded. A displayportion 9882 and a display portion 9883 are incorporated in the housing9881 and the housing 9891, respectively. In addition, the portableamusement machine illustrated in FIG. 29B includes a speaker portion9884, a recording medium insert portion 9886, an LED lamp 9890, an inputmeans (an operation key 9885, a connection terminal 9887, a sensor 9888(a sensor having a function of measuring force, displacement, position,speed, acceleration, angular velocity, rotational frequency, distance,light, liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radiation,flow rate, humidity, gradient, oscillation, odor, or infrared rays), ora microphone 9889), and the like. It is needless to say that thestructure of the portable amusement machine is not limited to the aboveand other structures provided with at least a semiconductor device maybe employed. The portable amusement machine may include other accessoryequipment, as appropriate. The portable amusement machine illustrated inFIG. 29B has a function of reading a program or data stored in arecording medium to display it on the display portion, and a function ofsharing information with another portable amusement machine via wirelesscommunication. The portable game machine in FIG. 29B can have variousfunctions such as, but not limited to, a function to the above.

FIG. 30A illustrates an example of a mobile phone 1000. The cellularphone 1000 is provided with a display portion 1002 incorporated in ahousing 1001, operation buttons 1003, an external connection port 1004,a speaker 1005, a microphone 1006, and the like.

Data can be input to the mobile phone 1000 illustrated in FIG. 30A bytouching the display portion 1002 with a finger or the like.Furthermore, operations such as making calls and composing mails can beperformed by touching the display portion 1002 with a finger or thelike.

There are mainly three screen modes of the display portion 1002. Thefirst mode is a display mode mainly for displaying an image. The secondmode is an input mode mainly for inputting information such as text. Thethird mode is a display-and-input mode in which two modes of the displaymode and the input mode are mixed.

For example, in the case of making a call or composing a mail, a textinput mode mainly for inputting text is selected for the display portion1002 so that text displayed on a screen can be input. In that case, itis preferable to display a keyboard or number buttons on almost all thearea of the screen of the display portion 1002.

Further, a detector including a sensor for detecting inclination, suchas a gyroscope or an acceleration sensor, may be provided inside themobile phone 1000, so that display on the screen of the display portion1002 can be automatically switched by determining the direction of themobile phone 1000 (whether the mobile phone 1000 is placed horizontallyor vertically for a landscape mode or a portrait mode).

The screen mode is switched by touching the display portion 1002 oroperating the operation buttons 1003 of the housing 1001. The screenmodes can also be switched depending on kinds of images displayed in thedisplay portion 1002. For example, when a signal for an image displayedin the display portion is data of moving images, the screen mode isswitched to the display mode, whereas when the signal is text data, thescreen mode is switched to the input mode.

Moreover, in the input mode, when input by touching the display portion1002 is not performed within a specified period while a signal detectedby the optical sensor in the display portion 1002 is detected, thescreen mode may be controlled so as to be switched from the input modeto the display mode.

The display portion 1002 can also function as an image sensor. Forexample, an image of a palm print, a fingerprint, or the like is takenby touching the display portion 1002 with the palm or the finger,whereby personal authentication can be performed. Furthermore, byproviding a backlight or a sensing light source emitting a near-infraredlight for the display portion, an image of a finger vein, a palm vein,or the like can also be taken.

FIG. 30B also illustrates an example of a mobile phone. The mobile phoneillustrated in FIG. 30B is provided with a display device 9410 having adisplay portion 9412 and operation buttons 9413 in a housing 9411 and acommunication device 9400 having an operation buttons 9402, an externalinput terminal 9403, a microphone 9404, a speaker 9405, and alight-emitting portion 9406 which emits light when receiving a call in ahousing 9401. The display device 9410 having a display function can bedetached from or attached to the communication device 9400 having atelephone function in two directions indicated by arrows. Therefore, thedisplay device 9410 and the communication device 9400 can be attached toeach other along either of respective short axes or long axes. In thecase where only the display function is needed, the display device 9410can be detached from the communication device 9400 and used alone.Images or input data can be transmitted or received by wireless or wirecommunication between the communication device 9400 and the displaydevice 9410, each of which has a rechargeable battery.

This embodiment can be combined with any of the other embodiments asappropriate.

This application is based on Japanese Patent Application serial no.2009-013532 filed with Japan Patent Office on Jan. 23, 2009, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a gateelectrode; an oxide semiconductor layer adjacent to the gate electrode;an insulating layer between the gate electrode and the oxidesemiconductor layer; a source electrode electrically connected to theoxide semiconductor layer through a source region; and a drain electrodeelectrically connected to the oxide semiconductor layer through a drainregion, wherein the gate electrode comprises a stack of a first layercomprising copper and a second layer comprising a conductive materialhaving heat resistance higher than copper, and wherein each of thesource region and the drain region comprises a material comprisingnitrogen.
 2. The semiconductor device according to claim 1, wherein thematerial comprising nitrogen is a non-single-crystal.
 3. Thesemiconductor device according to claim 1, wherein the oxidesemiconductor layer comprises an In—Ga—Zn based oxide semiconductor. 4.The semiconductor device according to claim 1, wherein a whole of theoxide semiconductor layer overlaps with the gate electrode.
 5. Thesemiconductor device according to claim 1, wherein the gate electrode islocated under the oxide semiconductor layer.
 6. The semiconductor deviceaccording to claim 1, further comprising: a second insulating layer overthe oxide semiconductor layer, wherein the second insulating layercomprises silicon and oxygen, and wherein the second insulating layercomprises a region located between the source electrode and the drainelectrode, and the region is in contact with an upper surface of theoxide semiconductor layer.
 7. The semiconductor device according toclaim 1, wherein the conductive material is one selected from the groupconsisting of titanium, molybdenum and tungsten.
 8. The semiconductordevice according to claim 1, wherein the material comprising nitrogen isa Zn—O—N based material.
 9. The semiconductor device according to claim1, wherein the material comprising nitrogen is a Sn—Zn—O—N basedmaterial.
 10. The semiconductor device according to claim 1, furthercomprising: a layer capable of attenuating an intensity of lightincident on the oxide semiconductor layer, the layer is located over theoxide semiconductor layer.
 11. A semiconductor device comprising: a gateelectrode; an oxide semiconductor layer adjacent to the gate electrode;an insulating layer between the gate electrode and the oxidesemiconductor layer; a source electrode electrically connected to theoxide semiconductor layer through a source region; and a drain electrodeelectrically connected to the oxide semiconductor layer through a drainregion, wherein the gate electrode comprises a stack of a first layercomprising copper and a second layer comprising a conductive materialhaving heat resistance higher than copper, and wherein each of thesource region and the drain region comprises a Ga—Zn—O—N based material.12. The semiconductor device according to claim 11, wherein theGa—Zn—O—N based material is a non-single-crystal.
 13. The semiconductordevice according to claim 11, wherein the oxide semiconductor layercomprises an In—Ga—Zn-based oxide semiconductor.
 14. The semiconductordevice according to claim 11, wherein a whole of the oxide semiconductorlayer overlaps with the gate electrode.
 15. The semiconductor deviceaccording to claim 11, wherein the gate electrode is located under theoxide semiconductor layer.
 16. The semiconductor device according toclaim 11, further comprising: a second insulating layer over the oxidesemiconductor layer, wherein the second insulating layer comprisessilicon and oxygen, and wherein the second insulating layer comprises aregion located between the source electrode and the drain electrode, andthe region is in contact with an upper surface of the oxidesemiconductor layer.
 17. The semiconductor device according to claim 11,wherein the conductive material is one selected from the groupconsisting of titanium, molybdenum and tungsten.
 18. The semiconductordevice according to claim 11, further comprising: a layer capable ofattenuating an intensity of light incident on the oxide semiconductorlayer, the layer is located over the oxide semiconductor layer.
 19. Asemiconductor device comprising: a gate electrode; an oxidesemiconductor layer adjacent to the gate electrode; an insulating layerbetween the gate electrode and the oxide semiconductor layer; a sourceelectrode electrically connected to the oxide semiconductor layerthrough a source region; and a drain electrode electrically connected tothe oxide semiconductor layer through a drain region, wherein the gateelectrode comprises a stack of a first layer comprising copper and asecond layer comprising a conductive material having heat resistancehigher than copper, and wherein each of the source region and the drainregion comprises an In—Ga—Zn—O—N based material.
 20. The semiconductordevice according to claim 19, wherein the In—Ga—Zn—O—N based material isa non-single-crystal.
 21. The semiconductor device according to claim19, wherein the oxide semiconductor layer comprises an In—Ga—Zn-basedoxide semiconductor.
 22. The semiconductor device according to claim 19,wherein a whole of the oxide semiconductor layer overlaps with the gateelectrode.
 23. The semiconductor device according to claim 19, whereinthe gate electrode is located under the oxide semiconductor layer. 24.The semiconductor device according to claim 19, further comprising: asecond insulating layer over the oxide semiconductor layer, wherein thesecond insulating layer comprises silicon and oxygen, and wherein thesecond insulating layer comprises a region located between the sourceelectrode and the drain electrode, and the region is in contact with anupper surface of the oxide semiconductor layer.
 25. The semiconductordevice according to claim 19, wherein the conductive material is oneselected from the group consisting of titanium, molybdenum and tungsten.26. The semiconductor device according to claim 19, further comprising:a layer capable of attenuating an intensity of light incident on theoxide semiconductor layer, the layer is located over the oxidesemiconductor layer.